DATA SHEET
SEMICONDUCTOR
P6KE Series
GLASS PASSIVATED JUNCTION
TRANSIENT VOLTAGE SUPPRESSOR
600 Watt Peak Power VOLTAGE- 6.8 to 540 Volts
FEATURES
•Plastic
package has Underwriters Laboratory
Flammability Classification 94V-O
•Typical
IR less than 1µA above 10V
•600W
surge capability at 1ms
•Excellent
clamping capability
•Low
zener impedance
•Fast
response time: typically less than 1.0 ps from 0 volts to BV min
•Pb
free product are available : 99% Sn above can meet RoHS environment substance
directive request
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.034 (.86)
.028 (.71)
DIA.
1.0 (25.4)
MIN.
.300 (7.6)
.230 (5.8)
.140 (3.6)
.104 (2.6)
DIA.
1.0 (25.4)
MIN.
DO-15
Unit:inch(mm)
MECHANICAL DATA
•Case:
JEDEC DO-15 Molded plastic
•Terminals:
Axial leads, solderable per MIL-STD-750, Method 2026
•Polarity:
Color band denoted cathode except Bipolar
•Mounting
Position: Any
•Weight:
0.015 ounce, 0.4 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%
RATING
Peak Power Dissipation at TA=25°C, TP=1ms(Note 1)
Steady State Power Dissipation at TL=75°C
Lead Lengths .375",(9.5mm)(Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave
Superimposed on Rated Load(JECED Method) (Note 3)
Operating and Storage Temperature Range
NOTES:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2.
2. Mounted on Copper Leaf area of 1.57 in2 (40mm2).
3. 8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
SYMBOL
PPK
PD
IFSM
TJ, TSTG
VALUE
600
5.0
100
-55 to +150
UNITS
Watts
Watts
Amps
°C
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REV.02 20120403
DEVICE CHARACTERISTICS
P6KE Series
P
PPM
— Peak Pulse Power (kW)
Fig. 1 – Peak Pulse Power Rating Curve
100
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
100
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
)
or Current (I
PPM
)
Derating in Percentage, %
75
50
1
25
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
25
50
75
100
125
150
175
200
td — Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 -- Pulse Waveform
150
Fig. 4 – Typ. Junction Capacitance Uni-Directional
C
J
— Junction Capacitance (pF)
6,000
T
J
= 25°C
f = 1.0MHz
1,000
Vsig = 50mVp-p
Measured at
Zero Bias
I
PPM
-- Peak Pulse Current,
% I
RSM
tr = 10µsec.
Peak Value
I
PPM
Half Value — I
PPM
2
100
T
J
= 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
td
100
Measured at
Stand-Off
Voltage, V
WM
1.0
10
100
200
0
0
1.0
2.0
3.0
4.0
10
t -- Time (ms)
V
(BR)
— Breakdown Voltage (V)
Fig. 5 – Steady State Power Derating Curve
5.0
Fig. 6 - Max. Non-Repetitive Forward Surge Current
200
P
M(AV)
, Steady State
Power Dissipation (W)
I
FSM
— Peak Forward
Surge Current (A)
L = 0.375" (9.5mm)
Lead Lengths
3.75
60 H
Z
Resistive or
Inductive Load
Uni-Directional Only
100
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
2.5
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
50
1.25
0
0
25
50
75
100
125
150
175
200
10
1
5
10
50
100
T
L
— Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 7 – Typ. Reverse Leakage Characteristics
Transient Thermal Impedance
(°C/W)
I
D
— Instantaneous Reverse
Leakage Current (µA)
100
Measured at Devices
Stand-off Voltage, V
WM
T
A
= 25°C
Fig. 8 – Typ. Transient Thermal Impedance
100
10
10
1
1
0.1
0.01
0
100
200
300
400
500
600
0.1
0.001
0.01
0.1
1
10
100
1000
V
(BR)
— Breakdown Voltage (V)
t
p
— Pulse Duration (sec)
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REV.02 20120403
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