Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
| Parameter Name | Attribute value |
| Maker | Diodes Incorporated |
| Objectid | 1810806694 |
| Parts packaging code | TO-92 |
| package instruction | SMALL OUTLINE, R-PSSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| compound_id | 5378953 |
| Maximum collector current (IC) | 2 A |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 15 |
| JESD-30 code | R-PSSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | MATTE TIN |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 240 MHz |
| ZTX649M1 | ZTX649L | ZTX649K | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| Parts packaging code | TO-92 | TO-92 | TO-92 |
| package instruction | SMALL OUTLINE, R-PSSO-G3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 2 A | 2 A | 2 A |
| Collector-emitter maximum voltage | 25 V | 25 V | 25 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 15 | 15 | 15 |
| JESD-30 code | R-PSSO-G3 | R-PSIP-W3 | R-PSIP-W3 |
| JESD-609 code | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 |
| Polarity/channel type | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | NO |
| Terminal surface | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal form | GULL WING | WIRE | WIRE |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 40 | 40 | 40 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 240 MHz | 240 MHz | 240 MHz |
| Base Number Matches | - | 1 | 1 |
京公网安备 11010802033920号
EEWORLD
