APT6035AVR datasheet, PDF - EEWORLD Datasheet

APT6035AVR: Description16A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size105KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT6035AVR Overview

16A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, TO-3, 2 PIN

Parameter Name	Attribute value
Maker	Microsemi
Parts packaging code	TO-204AA
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1210 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	64 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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