DTD133HCT116 datasheet, PDF - EEWORLD Datasheet

DTD133HCT116: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SST, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size169KB，4 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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DTD133HCT116 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SST, 3 PIN

Parameter Name	Attribute value
Maker	ROHM Semiconductor
Objectid	1448006380
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
compound_id	11004605
Other features	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 3
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V

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