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BU2507AF

Description
Bipolar Transistors;NPN;8A;700V;TO-3PML
CategoryDiscrete semiconductor   
File Size213KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BU2507AF Overview

Bipolar Transistors;NPN;8A;700V;TO-3PML

BU2507AF Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
BU2507AF
DESCRIPTION
·High
Switching Speed
·High
Voltage
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Emitter Voltage V
BE
=0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
700
7.5
8
15
4
6
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.8
UNIT
K/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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