BT150S600RT/R datasheet, PDF - EEWORLD Datasheet

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BT150S600RT/R: DescriptionSilicon Controlled Rectifier, 2500mA I(T), 600V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size268KB，5 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/; Environmental Compliance

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BT150S600RT/R Overview

Silicon Controlled Rectifier, 2500mA I(T), 600V V(DRM)

BT150S600RT/R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Nominal circuit commutation break time	100 µs
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	6 mA
Maximum leakage current	0.5 mA
On-state non-repetitive peak current	35 A
Maximum on-state voltage	1.8 V
Maximum on-state current	2500 A
Maximum operating temperature	125 °C
Off-state repetitive peak voltage	600 V
surface mount	YES
Trigger device type	SCR

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BT150S600RT/R Related Products

	BT150S600RT/R	BT150M500R	BT150M600R	BT150M800R	BT150S500R	BT150S500RT/R	BT150S600R	BT150S800RT/R
Description	Silicon Controlled Rectifier, 2500mA I(T), 600V V(DRM)	Silicon Controlled Rectifier, 2500mA I(T), 500V V(DRM)	Silicon Controlled Rectifier, 2500mA I(T), 600V V(DRM)	Silicon Controlled Rectifier, 2500mA I(T), 800V V(DRM)	Silicon Controlled Rectifier, 2500mA I(T), 500V V(DRM)	Silicon Controlled Rectifier, 2500mA I(T), 500V V(DRM)	Silicon Controlled Rectifier, 2500mA I(T), 600V V(DRM)	Silicon Controlled Rectifier, 2500mA I(T), 800V V(DRM)
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	incompatible	incompatible	conform to	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown	unknow	unknow	unknow	unknow	_compli	unknow
Nominal circuit commutation break time	100 µs	100 µs	100 µs	100 µs	100 µs	100 µs	100 µs	100 µs
Maximum DC gate trigger current	0.2 mA	0.2 mA	0.2 mA	0.2 mA	0.2 mA	0.2 mA	0.2 mA	0.2 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	6 mA	6 mA	6 mA	6 mA	6 mA	6 mA	6 mA	6 mA
Maximum leakage current	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA
On-state non-repetitive peak current	35 A	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Maximum on-state voltage	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Maximum on-state current	2500 A	2500 A	2500 A	2500 A	2500 A	2500 A	2500 A	2500 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Off-state repetitive peak voltage	600 V	500 V	600 V	800 V	500 V	500 V	600 V	800 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
JESD-609 code	-	e0	e0	e0	e0	e0	-	e0
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
ECCN code	-	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99

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