EEWORLDEEWORLDEEWORLD

Part Number

Search

BT151F-650

Description
Silicon Controlled Rectifier, 9 A, 650 V, SCR, PLASTIC PACKAGE-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size46KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BT151F-650 Overview

Silicon Controlled Rectifier, 9 A, 650 V, SCR, PLASTIC PACKAGE-3

BT151F-650 Parametric

Parameter NameAttribute value
MakerNXP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Shell connectionISOLATED
Nominal circuit commutation break time70 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current15 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current20 mA
JESD-30 codeR-PSFM-T3
Maximum leakage current0.5 mA
On-state non-repetitive peak current100 A
Number of components1
Number of terminals3
Maximum on-state current5700 A
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current9 A
Maximum repetitive peak off-state leakage current500 µA
Off-state repetitive peak voltage650 V
Repeated peak reverse voltage650 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR
Philips Semiconductors
Product specification
Thyristors
BT151F series
GENERAL DESCRIPTION
Glass passivated thyristors in a full
pack, plastic envelope, intended for
use in applications requiring high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT151F-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500
5.7
9
100
650
650
5.7
9
100
800
800
5.7
9
100
V
A
A
A
PINNING - SOT186
PIN
1
2
3
DESCRIPTION
cathode
anode
gate
PIN CONFIGURATION
case
SYMBOL
a
k
case isolated
1 2 3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
hs
87 ˚C
all conduction angles
half sine wave; T
j
= 125 ˚C prior
to surge; with reapplied V
DRM(max)
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-650
650
1
5.7
9
100
110
50
50
2
5
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 1996
1
Rev 1.100

BT151F-650 Related Products

BT151F-650 BT151F-800
Description Silicon Controlled Rectifier, 9 A, 650 V, SCR, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 9 A, 800 V, SCR, PLASTIC PACKAGE-3
Maker NXP NXP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compli
Shell connection ISOLATED ISOLATED
Nominal circuit commutation break time 70 µs 70 µs
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 50 V/us 50 V/us
Maximum DC gate trigger current 15 mA 15 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 20 mA 20 mA
JESD-30 code R-PSFM-T3 R-PSFM-T3
Maximum leakage current 0.5 mA 0.5 mA
On-state non-repetitive peak current 100 A 100 A
Number of components 1 1
Number of terminals 3 3
Maximum on-state current 5700 A 5700 A
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified
Maximum rms on-state current 9 A 9 A
Maximum repetitive peak off-state leakage current 500 µA 500 µA
Off-state repetitive peak voltage 650 V 800 V
Repeated peak reverse voltage 650 V 800 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Trigger device type SCR SCR
Android phone remote control experiment
Android phone remote control experiment...
1456999234@qq.c RF/Wirelessly
24 Ways to Stop Yourself from Crying
1. Look up at the ceiling until you feel happy. (Recommended: ★) 2. Leave the scene immediately! (Recommendation: ★★★) 3. You can look in the mirror and see your crying face in the mirror, and you wil...
SuperStar515 Talking
A little private dish every day--vim plugin
[align=left][color=rgb(0, 0, 0)][backcolor=rgb(255, 252, 243)][font=宋体, Arial] 1 #====================================================================================== 2 Please indicate the source fo...
qinkaiabc Programming Basics
I built an elevator at home. Who can control it with a single-chip microcomputer?
I built an elevator at home. Can anyone use a single-chip microcomputer to control the circuit? Let's discuss it. How to use a single-chip microcomputer to control the elevator room between the 1st an...
fenghanrui MCU
ArcPad7.0 runs in a customized wince kernel
After successful installation, when running ArcPad, a prompt appears on the interface: CacheBitmap Failed to create 24 bit DIB (638*452). DDB will be used. Then another prompt box appears: ArcPad Fail...
hangziming Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1248  2493  1009  1970  1235  26  51  21  40  25 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号