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BB303C

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SOT-343VAR, CMPAK-4
CategoryDiscrete semiconductor    The transistor   
File Size75KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

BB303C Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SOT-343VAR, CMPAK-4

BB303C Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Objectid1982523927
Parts packaging codeSC-82
package instructionPLASTIC, SOT-343VAR, CMPAK-4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
compound_id5416809
ConfigurationSINGLE
Minimum drain-source breakdown voltage7 V
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.05 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)12 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BB303C
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-698B (Z)
3rd. Edition
Mar. 2001
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4 (SOT-343 var.)
Outline
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1.
2.
Marking is “CW –”.
BB303C is individual type number of HITACHI BBFET.
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