IRF511 datasheet, PDF - EEWORLD Datasheet

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IRF511: DescriptionIRF511; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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IRF511 Overview

IRF511

IRF511 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	5.6 A
Maximum drain current (ID)	5.6 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Number of components	1
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	43 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

IRF511 Related Products

	IRF511	IRF711	IRF710	MTP2N20	MTP4N10	MTP4N08	IRF612	IRF513	IRF611	IRF613
Description	IRF511	TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2A I(D),TO-220AB	IRF710	MTP2N20	MTP4N10	MTP4N08	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB	IRF513	TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3.3A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow
Configuration	Single	Single	Single	Single	Single	Single	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	5.6 A	2 A	2 A	2 A	4 A	4 A	2.6 A	4.9 A	3.3 A	2.6 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	43 W	36 W	36 W	50 W	50 W	50 W	43 W	43 W	43 W	43 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	Texas Instruments	Texas Instruments	Texas Instruments	-	-	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
Maximum drain current (ID)	5.6 A	-	-	-	-	4 A	2.6 A	4.9 A	3.3 A	2.6 A

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