MTP4N10 datasheet, PDF - EEWORLD Datasheet

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MTP4N10: DescriptionMTP4N10; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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MTP4N10 Overview

MTP4N10

MTP4N10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

MTP4N10 Related Products

	MTP4N10	IRF711	IRF710	MTP2N20	MTP4N08	IRF612	IRF511	IRF513	IRF611	IRF613
Description	MTP4N10	TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2A I(D),TO-220AB	IRF710	MTP2N20	MTP4N08	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB	IRF511	IRF513	TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3.3A I(D),TO-220AB	TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow
Configuration	Single	Single	Single	Single	Single	Single	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	4 A	2 A	2 A	2 A	4 A	2.6 A	5.6 A	4.9 A	3.3 A	2.6 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	50 W	36 W	36 W	50 W	50 W	43 W	43 W	43 W	43 W	43 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	-	Texas Instruments	Texas Instruments	-	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
Maximum drain current (ID)	-	-	-	-	4 A	2.6 A	5.6 A	4.9 A	3.3 A	2.6 A

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