2N1893LEADFREE datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2N1893LEADFREE

Preview

2N1893LEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,; CategoryDiscrete semiconductor The transistor; File Size498KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

Download Datasheet Parametric View All

2N1893LEADFREE Overview

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,

2N1893LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

Preview

Download Datasheet

View All

2N1893

w w w. c e n t r a l s e m i . c o m

SILICON

NPN TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N1893 is a silicon

NPN epitaxial planar transistor designed for small signal

general purpose switching applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCER

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation (TC=25°C)

Power Dissipation

Operating and Storage Junction Temperature

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCER

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

fT

Cob

Cib

VCEO

VEBO

IC

PD

TJ, Tstg

120

100

80

7.0

500

3.0

0.8

-65 to +200

UNITS

V

mA

W

°C

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=90V

VEB=5.0V

IC=100μA

IC=10mA, RBE=10Ω

IC=10mA

IE=100μA

IC=50mA, IB=5.0mA

IC=150mA, IB=15mA

IC=50mA, IB=5.0mA

IC=150mA, IB=15mA

VCE=10V, IC=100μA

VCE=10V, IC=10mA

VCE=10V, IC=150mA

VCE=10V, IC=50mA, f=20MHz

VCB=10V, IE=0, f=100kHz

VEB=0.5V, IC=0, f=100kHz

20

35

40

50

120

100

80

7.0

MAX

10

UNITS

nA

V

1.2

5.0

0.9

1.3

V

120

MHz

15

85

pF

R1 (23-April 2013)

Recommended Resources

Constant current source differential amplifier circuit b

Dual output laptop power circuit

Pulse generator using two complementary transistors

400HZ drive circuit diagram

555 simple coil turns measuring instrument circuit

Computer motherboard circuit diagram 810 1_32

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components