2N2221LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N2221LEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,; CategoryDiscrete semiconductor The transistor; File Size532KB，2 Pages; ManufacturerCentral Semiconductor

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2N2221LEADFREE Overview

Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

2N2221LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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2N2221

2N2222

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2221 and

2N2222 are silicon NPN epitaxial planar transistors

designed for small signal, general purpose switching

applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

fT

Cob

Cib

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

Θ

JC

UNITS

V

mA

mW

W

°C

°C/W

60

30

5.0

800

500

1.2

-65 to +200

350

146

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=50V

-

VCB=50V, TA=150°C

VEB=3.0V

IC=10μA

IC=10mA

IE=10μA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA,

IC=500mA,

VCE=20V,

VCB=10V,

IB=15mA

IB=50mA

-

60

30

5.0

-

0.6

-

250

-

MAX

10

-

0.4

1.6

1.3

2.6

-

8.0

30

UNITS

nA

μA

nA

V

MHz

pF

IC=20mA, f=100MHz

IE=0, f=100kHz

VEB=0.5V, IC=0, f=100kHz

R2 (24-July 2013)

2N2221LEADFREE Related Products

	2N2221LEADFREE	2N2222LEADFREE
Description	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
Is it lead-free?	Lead free	Lead free
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	40
JEDEC-95 code	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	MATTE TIN	MATTE TIN (315)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	10
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz
Base Number Matches	1	1

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