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2N2222LEADFREE

Description
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
CategoryDiscrete semiconductor    The transistor   
File Size532KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N2222LEADFREE Overview

Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

2N2222LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
2N2221
2N2222
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221 and
2N2222 are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cob
Cib
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
60
30
5.0
800
500
1.2
-65 to +200
350
146
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=50V
-
VCB=50V, TA=150°C
VEB=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA,
IC=500mA,
VCE=20V,
VCB=10V,
IB=15mA
IB=50mA
-
-
60
30
5.0
-
-
0.6
-
250
-
-
MAX
10
10
10
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
IC=20mA, f=100MHz
IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
R2 (24-July 2013)

2N2222LEADFREE Related Products

2N2222LEADFREE 2N2221LEADFREE
Description Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
Is it lead-free? Lead free Lead free
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 25
JEDEC-95 code TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface MATTE TIN (315) MATTE TIN
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 10 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
Base Number Matches 1 1

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