2N2221
2N2222
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221 and
2N2222 are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cob
Cib
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
60
30
5.0
800
500
1.2
-65 to +200
350
146
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=50V
-
VCB=50V, TA=150°C
VEB=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA,
IC=500mA,
VCE=20V,
VCB=10V,
IB=15mA
IB=50mA
-
-
60
30
5.0
-
-
0.6
-
250
-
-
MAX
10
10
10
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
IC=20mA, f=100MHz
IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
R2 (24-July 2013)
2N2221
2N2222
SILICON
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
2N2221
2N2222
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
hFE
VCE=10V, IC=0.1mA
20
-
35
-
hFE
hFE
hFE
hFE
hFE
hFE
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=10mA, TA=-55°C
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
25
35
15
40
20
25
-
-
-
120
-
-
50
75
35
100
50
40
-
-
-
300
-
-
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R2 (24-July 2013)
w w w. c e n t r a l s e m i . c o m