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BAS21S

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size156KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
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Rectifier Diode,

BAS21S Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
Objectid8328330401
package instructionR-PDSO-G3
Reach Compliance Codeunknown
compound_id272726484
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
BL
Galaxy Electrical
Surface mount switching diode
FEATURES
Fast switching speed.
Production specification
BAS21/A/C/S
Pb
Lead-free
Surface mount package ideally suited for
Automatic insertion.
For general purpose switching applications.
High conductance.
BAS21C
BAS21S
BAS21
BAS21A
APPLICATIONS
High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
BAS21
BAS21A
BAS21C
BAS21S
Marking
JS
JS2
JS3
JS4
Package Code
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Forward Continuous Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
R
I
F
P
d
R
θJA
T
j
T
STG
Value
250
200
225
500
150
-65 to +150
Unit
V
mA
mW
℃/W
Document number: BL/SSSDC028
Rev.A
www.galaxycn.com
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