ZVN0545ASTOB datasheet, PDF - EEWORLD Datasheet

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ZVN0545ASTOB: DescriptionSmall Signal Field-Effect Transistor, 0.09A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size22KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVN0545ASTOB Overview

Small Signal Field-Effect Transistor, 0.09A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN0545ASTOB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
Objectid	1407838182
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
compound_id	10923173
Configuration	SINGLE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (ID)	0.09 A
Maximum drain-source on-resistance	50 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 450 Volts V

DS

* R

DS(on)

= 50Ω

ZVN0545A

D

G

S

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

VALUE

450

90

600

±

20

700

-55 to +150

UNIT

V

mA

V

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

Forward

Transconductance(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

450

1

3

20

10

400

150

50

100

70

10

4

7

16

10

MAX. UNIT CONDITIONS.

V

nA

µA

mA

Ω

mS

pF

ns

(

1

V

DD

≈25V,

I

D

=100mA

V

DS

=25 V, V

GS

=0V, f=1MHz

I

D

=1mA, V

GS

=0V

ID=1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=450 V, V

GS

=0

V

DS

=405 V, V

GS

=0V,

T=125°C

(2)

V

DS

=25 V, V

GS

=10V

V

GS

=10V,I

D

=100mA

V

DS

=25V,I

D

=100mA

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

3-357

ZVN0545ASTOB Related Products

	ZVN0545ASTOB	ZVN0545ASTZ	ZVN0545ASTOA
Description	Small Signal Field-Effect Transistor, 0.09A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.09A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Field-Effect Transistor, 0.09A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code	unknown	not_compliant	_compli
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	450 V	450 V	450 V
Maximum drain current (ID)	0.09 A	0.09 A	0.09 A
Maximum drain-source on-resistance	50 Ω	50 Ω	50 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	MATTE TIN	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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