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ZVP2110B

Description
600mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size34KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZVP2110B Overview

600mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39

ZVP2110B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes Incorporated
Objectid1407999367
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
compound_id160972048
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)0.6 A
Maximum drain current (ID)0.6 A
Maximum drain-source on-resistance8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)235
Polarity/channel typeP-CHANNEL
Maximum power consumption environment5 W
Maximum power dissipation(Abs)5 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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