TIP34A datasheet, PDF - EEWORLD Datasheet

TIP34A: Description10A, 60V, PNP, Si, POWER TRANSISTOR, TO-218; CategoryDiscrete semiconductor The transistor; File Size46KB，2 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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TIP34A Overview

10A, 60V, PNP, Si, POWER TRANSISTOR, TO-218

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Objectid	1407136027
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	not_compliant
ECCN code	EAR99
compound_id	5417313
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	80 W
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
VCEsat-Max	4 V

	TIP34A	TIP34B
Description	10A, 60V, PNP, Si, POWER TRANSISTOR, TO-218	10A, 80V, PNP, Si, POWER TRANSISTOR, TO-218
Is it Rohs certified?	incompatible	incompatible
Maker	STMicroelectronics	STMicroelectronics
Reach Compliance Code	not_compliant	_compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	10 A	10 A
Collector-emitter maximum voltage	60 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JEDEC-95 code	TO-218	TO-218
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power consumption environment	80 W	80 W
Maximum power dissipation(Abs)	80 W	80 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz
VCEsat-Max	4 V	4 V

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