IS62WV1288ALL
IS62WV1288BLL
128K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 45ns, 55ns, 70ns
• CMOS low power operation:
30 mW (typical) operating
15 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply:
1.65V--2.2V V
DD
(62WV1288ALL)
2.5V--3.6V V
DD
(62WV1288BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
ISSI
JUNE 2003
®
DESCRIPTION
The
ISSI
IS62WV1288ALL / IS62WV1288BLL are high-
speed, 1M bit static RAMs organized as 128K words by 8
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62WV1288ALL and IS62WV1288BLL are packaged
in the JEDEC standard 32-pin TSOP (TYPEI), sTSOP
(TYPEI), SOP, and 36-pin mini BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 8
MEMORY ARRAY
V
DD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2
CS1
OE
WE
CONTROL
CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
06/09/03
1
IS62WV1288ALL,
IS62WV1288BLL
ISSI
Value
–0.2 to V
DD
+0.3
–0.2 to +3.8
–65 to +150
1.0
Unit
V
V
°C
W
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (V
DD
)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS62WV1288ALL
1.65V - 2.2V
1.65V - 2.2V
IS62WV1288BLL
2.5V - 3.6V
2.5V - 3.6V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH(2)
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OH
= -1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
DD
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
V
DD
+ 0.2
V
DD
+ 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
Notes:
1. Undershoot: –1.0V for pulse width less than 10 ns. Not 100% tested.
2. Overshoot: V
DD
+ 1.0V for pulse width less than 10 ns. Not 100% tested.
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
X
H
H
L
CS1
H
X
L
L
L
CS2
X
L
H
H
H
OE
X
X
H
L
X
I/O Operation
High-Z
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
06/09/03
3
IS62WV1288ALL,
IS62WV1288BLL
ISSI
Max.
55 ns
10
10
6
5
5
0.8
0.8
Max.
70 ns
8
8
5
5
5
0.8
0.8
Unit
mA
®
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV1288ALL
(1.65V - 2.2V)
Symbol Parameter
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
typ.
(2)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
I
CC
1
I
SB
1
mA
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
typ.
(2)
10
10
5
10
10
5
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=1.8V, T
A
=25
o
C. Not 100% tested.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV1288BLL
(2.5V - 3.6V)
Symbol Parameter
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
typ.
(2)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
Max.
45ns
17
17
12
5
5
0.8
0.8
Max.
55 ns
15
15
10
5
5
0.8
0.8
Unit
mA
I
CC
1
I
SB
1
mA
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
typ.
(2)
10
10
5
10
10
5
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.0V, T
A
=25
o
C. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
06/09/03
5
Power technology
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