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RJK0346DPA_13

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size103KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

RJK0346DPA_13 Overview

POWER, FET

RJK0346DPA_13 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
Preliminary
Datasheet
RJK0346DPA
30V, 65A, 2.0m max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0911EJ0400
Rev.4.00
Mar 19, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-C
Tch
Tstg
Note1
Ratings
30
20
65
260
65
35
122.5
65
1.92
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0911EJ0400 Rev.4.00
Mar 19, 2013
Page 1 of 6

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