Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
| Parameter Name | Attribute value |
| package instruction | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.15 A |
| Collector-based maximum capacity | 5 pF |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 270 |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 140 MHz |
| VCEsat-Max | 0.5 V |
| Base Number Matches | 1 |
| 2SA937AM/S | 2SA937AM/QS | 2SA937AM/RS | 2SA937AMC2/RS | 2SA937AMC2/QS | 2SA937AMC2/S | |
|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
| package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.15 A | 0.15 A | 0.15 A | 0.15 A | 0.15 A | 0.15 A |
| Collector-based maximum capacity | 5 pF | 5 pF | 5 pF | 5 pF | 5 pF | 5 pF |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 270 | 120 | 180 | 180 | 120 | 270 |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 140 MHz | 140 MHz | 140 MHz | 140 MHz | 140 MHz | 140 MHz |
| VCEsat-Max | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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