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P6KE510C-B

Description
TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size996KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric View All

P6KE510C-B Overview

TVS DIODE

P6KE510C-B Parametric

Parameter NameAttribute value
MakerLittelfuse
Objectid1226165446
Reach Compliance Codeunknown
compound_id14004610
Breakdown voltage nominal value510 V
Maximum clamping voltage698 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage434 V
surface mountNO
Transient Voltage Suppression Diodes
Axial Leaded – 600W > P6KE series
P6KE Series
Description
Bi-directional
RoHS
The P6KE Series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
Uni-directional
V
BR
@T
J
= V
BR
@25°C × (1+
α
T
• ESD protection of data
lines in accordance with
x (T
J
- 25))
IEC 61000-4-2 (IEC801-2)
(αT: Temperature Coefficient)
• EFT protection of data
• Glass passivated chip
lines in accordance with
junction in DO-15 Package
IEC 61000-4-4 (IEC801-4)
• 600W peak pulse
• Low incremental surge
capability at 10/1000μs
resistance
waveform, repetition rate
• Typical I
R
less than 1μA
(duty cycles):0.01%
above 13V
• Fast response time:
• High temperature
typically less than 1.0ps
soldering guaranteed:
from 0 Volts to BV min
260°C/40 seconds /
• Excellent clamping
0.375”
,(9.5mm) lead
capability
length, 5 lbs., (2.3kg)
• Typical failure mode is
tension
short from over-specified
• Plastic package has
voltage or current
underwriters laboratory
• Whisker test is conducted
flammability classification
based on JEDEC
94V-O
JESD201A per its table 4a
• Matte tin lead–free plated
and 4c
• Halogen free and RoHS
• IEC-61000-4-2 ESD
compliant
15kV(Air), 8kV (Contact)
Applications
T
J
, T
STG
R
uJL
R
uJA
-55 to 150
20
75
°C
°C/W
°C/W
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E128662/E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Test Waveform (Fig.2)
(Note 1)
Steady State Power Dissipation on
Inifinite Heat Sink at T
L
=75ºC (Fig. 6)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
Only (Note 2)
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
Only (Note 3)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
Value
600
5.0
100
3.5/5.0
Unit
W
W
A
V
TVS devices are ideal for the protection of I/O interfaces,
V
CC
bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
_
_
3. V
F
<3.5V for devices of V
BR
<
200V and V
F
< 5.0V for devices of V
BR
>
201V.
Functional Diagram
Additional Information
Bi-directional
Datasheet
Resources
Samples
Cathode
Uni-directional
Anode
© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/10/14
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