R219CH08DN0 datasheet, PDF - EEWORLD Datasheet

R219CH08DN0: DescriptionSilicon Controlled Rectifier, 1100000mA I(T), 800V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size749KB，6 Pages; ManufacturerIXYS; Related ProductsFound1parts with similar functions to R219CH08DN0

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R219CH08DN0 Overview

Silicon Controlled Rectifier, 1100000mA I(T), 800V V(DRM),

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compli
Nominal circuit commutation break time	10 µs
Critical rise rate of minimum off-state voltage	50 V/us
Maximum DC gate trigger current	300 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	1000 mA
Maximum leakage current	70 mA
On-state non-repetitive peak current	9000 A
Maximum on-state voltage	2.04 V
Maximum on-state current	1100000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	800 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

Part Number	Manufacturer	Description
R219CH08DN0	Littelfuse	Silicon Controlled Rectifier, 1100000mA I(T), 800V V(DRM),

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