HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
March 1997
10A, 400V and 500V N-Channel IGBTs
Packages
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Features
• 10A, 400V and 500V
• V
CE(ON)
2.5V Max.
• T
FALL
≤1.4µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
COLLECTOR
(FLANGE)
GATE
EMITTER
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insu-
lated gate bipolar transistors (IGBTs) designed for high volt-
age, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated
directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
HGTD10N40F1
HGTD10N50F1
HGTD10N40F1S
HGTD10N50F1S
PACKAGE
TO-251AA
TO-251AA
TO-252AA
TO-252AA
BRAND
G10N40
G10N50
G10N40
G10N50
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD10N40F1
HGTD10N40F1S
400
400
±20
12
10
75
0.6
-55 to +150
HGTD10N50F1
HGTD10N50F1S
500
500
±20
12
10
75
0.6
-55 to +150
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
2425.4
3-1
Specifications HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
Electrical Specifications
,
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
HGTD10N40F1
HGTD10N40F1S
HGTD10N50F1
HGTD10N50F1S
MIN
500
2.0
-
-
-
-
-
-
-
MAX
-
4.5
-
250
100
2.5
2.2
2.5
2.2
UNITS
V
V
µA
µA
nA
V
V
V
V
V
nC
ns
ns
ns
ns
mJ
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
Collector-Emitter On-Voltage
SYMBOL
BV
CES
V
GE(TH)
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
GE
= V
CE
, I
C
= 1mA
T
J
= +150
o
C, V
CE
= 400V
T
J
= +150
o
C, V
CE
= 500V
V
GE
=
±20V,
V
CE
= 0V
T
J
= +150
o
C, I
C
= 5A, V
GE
= 10V
T
J
= +150
o
C, I
C
= 5A, V
GE
= 15V
T
J
= +25
o
C, I
C
= 5A, V
GE
= 10V
T
J
= +25
o
C, I
C
= 5A, V
GE
= 15V
MIN
400
2.0
-
-
-
-
-
-
-
MAX
-
4.5
250
-
100
2.5
2.2
2.5
2.2
I
GES
V
CE(ON)
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
Thermal Resistance Junction-to-
Case (IGBT)
V
GEP
Q
G(ON)
t
D(ON)
t
RI
t
D(OFF)
t
FI
W
OFF
I
C
= 5A, V
CE
= 10V
I
C
= 5A, V
CE
= 10V
Resistive Load, I
C
= 5A,
V
CE
= 400V, R
L
= 80Ω,
T
J
= +150
o
C, V
GE
= 10V,
R
G
= 25Ω
5.3 (Typ)
13.4 (Typ)
45 (Typ)
35 (Typ)
130 (Typ)
1400 (Typ)
0.64 (Typ)
t
D(OFF)
t
FI
W
OFF
Inductive Load (See Figure 11),
I
C
= 5A, V
CE(CLP)
= 400V,
R
L
= 80Ω, L = 50µH, T
J
= +150
o
C,
V
GE
= 10V, R
G
= 25Ω
-
-
-
375
1200
1.2
-
-
-
375
1200
1.2
ns
ns
mJ
R
θJC
-
1.67
-
1.67
o
C/W
Typical Performance Curves
12
I
CE
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 250µs
DUTY CYCLE < 2%
10
V
GE
= 15V
V
GE
= 10V
V
GE
= 6.0V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
T
C
= +25
o
C
V
GE
= 5.5V
V
GE
= 5.0V
4
V
GE
= 4.5V
V
GE
= 4.0V
0
0
2
4
6
8
10
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
10
8
8
T
C
= -55
o
C
T
C
=
T
C
=
+25
o
C
6
6
+150
o
C
4
2
2
0
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
3-2
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
Typical Performance Curves
(Continued)
4
V
CE(ON)
, SATURATION VOLTAGE (V)
I
CE
, DC COLLECTOR CURRENT (A)
T
J
= +150
o
C
3
V
GE
= 10V
18
16
14
12
10
8
6
4
2
0
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
+25
+50
+75
+100
o
V
GE
= 15V
2
V
GE
= 15V
V
GE
= 10V
1
0
+125
+150
T
C
, CASE TEMPERATURE ( C)
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
1000
f = 1MHz
800
C, CAPACITANCE (pF)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
0.5
T
J
+150
o
C, V
CE
= 400V
L = 50µH
t
D(OFF)I
, TURN-OFF DELAY (µs)
0.4
600
CISS
400
0.3
0.2
V
GE
= 15V, R
G
= 50Ω
V
GE
= 10V, R
G
= 50Ω
V
GE
= 15V, R
G
= 25Ω
V
GE
= 10V, R
G
= 25Ω
200
COSS
0
0
CRSS
5
10
15
20
25
0.1
0.0
1
I
CE
, COLLECTOR-EMITTER CURRENT (A)
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
2
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25Ω, L = 50µH
t
FI
, FALL TIME (µs)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
10
W
OFF
, TURN-OFF SWITCHING LOSS (mJ)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25Ω, L = 50µH
V
CE
= 400V
1
V
CE
= 400V
1.0
V
CE
= 200V
0
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
0.1
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
3-3
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
Typical Performance Curves
(Continued)
f
OP
, MAXIMUM OPERATING FREQUENCY (KHz)
1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
T
J
= +150
o
C, T
C
= +100
o
C, V
GE
= 10V
R
G
= 25Ω, PT = 75W, L = 50µH
V
CE
= 200V
100
V
CE
= 400V
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
500
GATE-
EMITTER
VOLTAGE
V
CC
= BV
CES
R
L
= 100Ω
I
G(REF)
= 0.33mA
V
GE
= 10V
V
CC
= BV
CES
10
V
GE
, GATE-EMITTER VOLTAGE (V)
375
250
5
10
0.75 BV
CES
125
0.50 BV
CES
0.25 BV
CES
0
I
G(REF)
20
I
G(ACT)
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0
I
G(REF)
1
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
COLLECTOR-EMITTER VOLTAGE
NOTE:
P
D
= ALLOWABLE DISSIPATION
TIME (µs)
80
P
C
= CONDUCTION DISSIPATION
I
G(ACT)
FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
Test Circuit
R
L
L = 50µH
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GEN
= 50Ω
V
CC
400V
+
-
20V
0V
R
GE
= 50Ω
FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
3-4
京公网安备 11010802033920号
EEWORLD
