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HGTD10N50F1S

Description
TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,12A I(C),TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size33KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

HGTD10N50F1S Overview

TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,12A I(C),TO-252AA

HGTD10N50F1S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
Maximum collector current (IC)12 A
Collector-emitter maximum voltage500 V
Gate emitter threshold voltage maximum4.5 V
Gate-emitter maximum voltage20 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
March 1997
10A, 400V and 500V N-Channel IGBTs
Packages
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Features
• 10A, 400V and 500V
• V
CE(ON)
2.5V Max.
• T
FALL
≤1.4µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
COLLECTOR
(FLANGE)
GATE
EMITTER
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insu-
lated gate bipolar transistors (IGBTs) designed for high volt-
age, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated
directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
HGTD10N40F1
HGTD10N50F1
HGTD10N40F1S
HGTD10N50F1S
PACKAGE
TO-251AA
TO-251AA
TO-252AA
TO-252AA
BRAND
G10N40
G10N50
G10N40
G10N50
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD10N40F1
HGTD10N40F1S
400
400
±20
12
10
75
0.6
-55 to +150
HGTD10N50F1
HGTD10N50F1S
500
500
±20
12
10
75
0.6
-55 to +150
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
2425.4
3-1

HGTD10N50F1S Related Products

HGTD10N50F1S HGTD10N40F1S HGTD10N50F1 HGTD10N40F1
Description TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,12A I(C),TO-252AA TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,12A I(C),TO-252AA TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,12A I(C),TO-251AA TRANSISTOR,IGBT,N-CHAN,400V V(BR)CES,12A I(C),TO-251AA
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code not_compliant not_compliant not_compliant _compli
Maximum collector current (IC) 12 A 12 A 12 A 12 A
Collector-emitter maximum voltage 500 V 400 V 500 V 400 V
Gate emitter threshold voltage maximum 4.5 V 4.5 V 4.5 V 4.5 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V
JESD-609 code e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W 75 W 75 W
surface mount YES YES NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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