Photo Transistor, PHOTO TRANSISTOR DETECTOR
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| Reach Compliance Code | unknown |
| Coll-Emtr Bkdn Voltage-Min | 30 V |
| Configuration | SINGLE |
| Maximum dark power | 100 nA |
| Infrared range | YES |
| Nominal photocurrent | 0.03 mA |
| Number of functions | 1 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -30 °C |
| Optoelectronic device types | PHOTO TRANSISTOR |
| peak wavelength | 900 nm |
| shape | ROUND |
| size | 3.1 mm |





| TPS616-C | TPS616-A | TPS616-AB | TPS616-B | TPS616-BC | |
|---|---|---|---|---|---|
| Description | Photo Transistor, PHOTO TRANSISTOR DETECTOR | Photo Transistor, PHOTO TRANSISTOR DETECTOR | Photo Transistor, PHOTO TRANSISTOR DETECTOR | Photo Transistor, PHOTO TRANSISTOR DETECTOR | Photo Transistor, PHOTO TRANSISTOR DETECTOR |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum dark power | 100 nA | 100 nA | 100 nA | 100 nA | 100 nA |
| Infrared range | YES | YES | YES | YES | YES |
| Nominal photocurrent | 0.03 mA | 0.01 mA | 0.01 mA | 0.017 mA | 0.017 mA |
| Number of functions | 1 | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| Minimum operating temperature | -30 °C | -30 °C | -30 °C | -30 °C | -30 °C |
| Optoelectronic device types | PHOTO TRANSISTOR | PHOTO TRANSISTOR | PHOTO TRANSISTOR | PHOTO TRANSISTOR | PHOTO TRANSISTOR |
| peak wavelength | 900 nm | 900 nm | 900 nm | 900 nm | 900 nm |
| shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| size | 3.1 mm | 3.1 mm | 3.1 mm | 3.1 mm | 3.1 mm |
| Coll-Emtr Bkdn Voltage-Min | 30 V | 30 V | 30 V | 30 V | - |