TPS616-B datasheet, PDF - EEWORLD Datasheet

TPS616-B: DescriptionPhoto Transistor, PHOTO TRANSISTOR DETECTOR; CategoryLED optoelectronic/LED photoelectric; File Size95KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TPS616-B Overview

Photo Transistor, PHOTO TRANSISTOR DETECTOR

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Objectid	1431359502
Reach Compliance Code	unknown
compound_id	7765756
Coll-Emtr Bkdn Voltage-Min	30 V
Configuration	SINGLE
Maximum dark power	100 nA
Infrared range	YES
Nominal photocurrent	0.017 mA
Number of functions	1
Maximum operating temperature	85 °C
Minimum operating temperature	-30 °C
Optoelectronic device types	PHOTO TRANSISTOR
peak wavelength	900 nm
shape	ROUND
size	3.1 mm

	TPS616-B	TPS616-A	TPS616-AB	TPS616-C	TPS616-BC
Description	Photo Transistor, PHOTO TRANSISTOR DETECTOR	Photo Transistor, PHOTO TRANSISTOR DETECTOR	Photo Transistor, PHOTO TRANSISTOR DETECTOR	Photo Transistor, PHOTO TRANSISTOR DETECTOR	Photo Transistor, PHOTO TRANSISTOR DETECTOR
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum dark power	100 nA	100 nA	100 nA	100 nA	100 nA
Infrared range	YES	YES	YES	YES	YES
Nominal photocurrent	0.017 mA	0.01 mA	0.01 mA	0.03 mA	0.017 mA
Number of functions	1	1	1	1	1
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-30 °C	-30 °C	-30 °C	-30 °C	-30 °C
Optoelectronic device types	PHOTO TRANSISTOR	PHOTO TRANSISTOR	PHOTO TRANSISTOR	PHOTO TRANSISTOR	PHOTO TRANSISTOR
peak wavelength	900 nm	900 nm	900 nm	900 nm	900 nm
shape	ROUND	ROUND	ROUND	ROUND	ROUND
size	3.1 mm	3.1 mm	3.1 mm	3.1 mm	3.1 mm
Coll-Emtr Bkdn Voltage-Min	30 V	30 V	30 V	30 V	-

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