BTA16
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
G (Q
1
)
Value
16
600 ,700 and 800
10 to 50
Unit
A
V
mA
DESCRIPTION
Suitable for AC switching operations, can be used as an
ON/OFF function in applications such as static relays,
heating regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances. By using an internal
ceramic pad, the BTA series provides voltage insulated
tab (rated at 2500V RMS) complying with UL standards.
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
Tc = 105°C
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 20 µs
Tj = 125°C
Tj = 125°C
Tj = 125°C
t = 20 ms
t = 16.7 ms
Value
16
160
168
144
50
4
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
Unit
A
A
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I t Value for fusing
Critical rate of rise of on-state current
²
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
I
G
= 2 x
IGT
, tr £ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Page 1 of 5
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BTA16
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
n
SNUBBERLESS
™
and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
TW
-
-
0.2
-
-
-
MIN.
MIN.
-
-
-
-
15
25
30
40
8.5
3.0
-
35
50
60
500
-
-
8.5
50
70
80
1000
-
-
14
V/µs
A/ms
Value
SW
10
CW
35
1.3
BW
50
Unit
mA
V
V
mA
mA
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
(dI/dt)c (2)
V
D
= 12 V
R
L
= 30 W
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
V
D
=
VDRM
R
L
= 3.3 kW
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
I - III
II
MAX.
V
D
= 67
%VDRM
gate open
Tj = 125°C
(dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C
Without snubber
Tj = 125°C
n
STANDARD (4 Quadrants)
Quadrant
C
Value
Unit
B
50
100
1.3
0.2
25
40
80
MIN.
MIN.
200
5
50
60
120
400
10
V/µs
V/µs
mA
V
V
mA
mA
Symbol
Test Conditions
I
G
(1)
V
D
= 12 V R
L
= 30 W
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
=
VDRM
R
L
= 3.3 kW Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67
%VDRM
gate open Tj = 125°C
Tj = 125°C
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
25
50
I - III - IV
II
MAX.
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
STATIC CHARACTERISTICS
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 5.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
25
5
2
Unit
V
V
mW
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Parameter
Value
2.1
60
Unit
Junction to case (AC)
Junction to ambient
°C/W
°C/W
Page 2 of 5
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Embedded System
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