IMS1600N-70M datasheet, PDF - EEWORLD Datasheet

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IMS1600N-70M: DescriptionStandard SRAM, 64KX1, 70ns, CMOS, CQCC22,; Categorystorage storage; File Size275KB，9 Pages; ManufacturerInmos Corporation

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IMS1600N-70M Overview

Standard SRAM, 64KX1, 70ns, CMOS, CQCC22,

IMS1600N-70M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Inmos Corporation
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	SEPARATE
JESD-30 code	R-XQCC-N22
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	22
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	QCCN
Encapsulate equivalent code	LCC22,.3X.5
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.014 A
Minimum standby current	4.5 V
Maximum slew rate	0.07 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD

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IMS1600N-70M Related Products

	IMS1600N-70M	IMS1601LN70M	IMS1601LS45M	IMS1601LS55M	IMS1600S-70M	IMS1600S-45M	IMS1601LS70M
Description	Standard SRAM, 64KX1, 70ns, CMOS, CQCC22,	Standard SRAM, 64KX1, 70ns, CMOS, CQCC22,	Standard SRAM, 64KX1, 45ns, CMOS, CDIP22,	Standard SRAM, 64KX1, 55ns, CMOS, CDIP22,	Standard SRAM, 64KX1, 70ns, CMOS, CDIP22,	Standard SRAM, 64KX1, 45ns, CMOS, CDIP22,	Standard SRAM, 64KX1, 70ns, CMOS, CDIP22,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	70 ns	70 ns	45 ns	55 ns	70 ns	45 ns	70 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XQCC-N22	R-XQCC-N22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1	1	1
Number of terminals	22	22	22	22	22	22	22
word count	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	64KX1	64KX1	64KX1	64KX1	64KX1	64KX1	64KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	QCCN	QCCN	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	LCC22,.3X.5	LCC22,.3X.5	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Maximum standby current	0.014 A	0.0008 A	0.0008 A	0.0008 A	0.014 A	0.014 A	0.0008 A
Minimum standby current	4.5 V	2 V	2 V	2 V	4.5 V	4.5 V	2 V
Maximum slew rate	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	1.27 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	QUAD	QUAD	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	Inmos Corporation	Inmos Corporation	-	-	Inmos Corporation	Inmos Corporation	Inmos Corporation

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