N-Channel JFET
High Frequency Amplifier
CORPORATION
U308 – U310
FEATURES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 4mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
•
High Power Gain
•
Low Noise
Greater The
•
Dynamic Rangeto 75Ω Input 100dB
Easily Matched
•
PIN CONFIGURATION
(TO-52)
ORDERING INFORMATION
Part
U308-10
XU308-10
D
S
Package
Hermetic TO-52
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
G, C
5021
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
U308
U309
U310
UNITS
-150
-150
-25
-4.0
30
1.0
10
250
2.5
5.0
10
10
17
250
2.5
5.0
10
10
17
250
2.5
5.0
nV
Hz
√
-2.5
24
-6.0
60
1.0
mA
V
mS
µS
pF
pA
nA
V
TEST CONDITIONS
V
GS
= -15V
V
GS
= 0
T
A
= 125
o
C
MIN TYP MAX MIN TYP MAX MIN TYP MAX
I
GSS
BV
GSS
V
GS(off)
I
DSS
V
GS(f)
g
fg
g
ogs
C
gd
C
gs
e
n
Gate Reverse Current
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current (Note 1)
Gate-Source Forward Voltage
Common-Gate Forward
Transconductance (Note 1)
Common Gate Output Conductance
Drain-Gate Capacitance
Gate-Source Capacitance
Equivalent Short Circuit
Input Noise Voltage
10
17
-25
-1.0
12
-6.0
60
1.0
-150
-150
-25
-1.0
12
-150
-150
I
G
= -1µA, V
DS
= 0
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0
I
G
= 10mA, V
DS
= 0
V
DS
= 10V,
I
D
= 10mA
V
GS
= -10V,
V
DS
= 10V
V
DS
= 10V,
I
D
= 10mA
f = 1kHz
f = 1MHz
(Note 2)
f = 100Hz
(Note 2)
U308 – U310
CORPORATION
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
Common-Gate Forward
Transconductance
Common-Gate Output
Conductance
Common-Gate Power Gain
14
10
NF
Noise Figure
U308
U309
U310
UNITS
TEST CONDITIONS
f = 100MHz
µS
V
DS
= 10V,
I
D
= 10mA
(Note 2)
f = 450MHz
f = 100MHz
f = 450MHz
f = 100MHz
dB
2.0
3.5
f = 450MHz
f = 100MHz
f = 450MHz
MIN TYP MAX MIN TYP MAX MIN TYP MAX
g
fg
15
14
0.18
0.32
16
11
1.5
2.7
NOTES: 1.
Pulse test duration = 2ms.
2.
For design reference only, not 100% tested.
2.0
3.5
14
10
15
14
0.18
0.32
16
11
1.5
2.7
2.0
3.5
14
10
15
14
0.18
0.32
16
11
1.5
2.7
g
ogs
G
pg
Renesas Electronics MCUs
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