RN2967FE~RN2969FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2967FE,RN2968FE,RN2969FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
•
Complementary to RN1967FE~RN1969FE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2967FE
RN2968FE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
B
R1
R2
RN2969FE
E
JEDEC
JEITA
TOSHIBA
―
―
2-2N1A
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2967FE
Emitter-base voltage
RN2968FE
RN2969FE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Weight: 3 mg (typ.)
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2011-01-19
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