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MC-4516DA72F-A10B

Description
Synchronous DRAM Module, 16MX72, 7.5ns, MOS, DIMM-200
Categorystorage    storage   
File Size148KB,16 Pages
ManufacturerNEC Electronics
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MC-4516DA72F-A10B Overview

Synchronous DRAM Module, 16MX72, 7.5ns, MOS, DIMM-200

MC-4516DA72F-A10B Parametric

Parameter NameAttribute value
MakerNEC Electronics
Objectid1481087678
Parts packaging codeDIMM
package instruction,
Contacts200
Reach Compliance Codeunknown
ECCN codeEAR99
compound_id9796918
access modeFOUR BANK PAGE BURST
Maximum access time7.5 ns
JESD-30 codeR-XDMA-N200
memory density1207959552 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals200
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX72
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516DA72
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
REGISTERED TYPE
Description
The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M
SDRAM :
µ
PD4564441 (Rev. E) are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 72 bits organization (ECC type)
Clock frequency and Clock access time
Family
/CAS Latency
Clock frequency
(MAX.)
MC-4516DA72-A80
CL = 3
CL = 2
MC-4516DA72-A10
CL = 3
CL = 2
MC-4516DA72-A10B
CL = 3
CL = 2
100 MHz
100 MHz
100 MHz
77 MHz
100 MHz
67 MHz
Burst cycle time
(MIN.)
10 ns
10 ns
10 ns
13 ns
10 ns
15 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential / Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single +3.3 V +0.3 / –0.15 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
200-pin dual in-line memory module (Pin pitch = 1.27 mm)
Registered type
Serial PD
The information in this document is subject to change without notice.
Document No. M12353EJ7V0DS00 (7th edition)
Date Published July 1998 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997

MC-4516DA72F-A10B Related Products

MC-4516DA72F-A10B MC-4516DA72F-A80
Description Synchronous DRAM Module, 16MX72, 7.5ns, MOS, DIMM-200 Synchronous DRAM Module, 16MX72, 6.5ns, MOS, DIMM-200
Maker NEC Electronics NEC Electronics
Parts packaging code DIMM DIMM
Contacts 200 200
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 7.5 ns 6.5 ns
JESD-30 code R-XDMA-N200 R-XDMA-N200
memory density 1207959552 bit 1207959552 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72
Number of functions 1 1
Number of ports 1 1
Number of terminals 200 200
word count 16777216 words 16777216 words
character code 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 16MX72 16MX72
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.15 V 3.15 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO NO
technology MOS MOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
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