CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
200
-
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 100V,
I
D
= 23A
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
5.0
4.0
-
25
250
100
200
2.78
0.115
0.253
156
510
574
280
558
298
20
66
144
1.0
48
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
R
θ
JC
R
θ
JA
V
DS
= 160V,
V
GS
= 0V
V
GS
=
±20V
V
GS
= 10V, I
D
= 23A
I
D
= 15A,
V
GS
= 10V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on slash sheet)
Gate Charge at 10V
Threshold Gate Charge (Not on slash sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
DD
= 100V, I
D
= 23A,
R
L
= 4.35Ω, V
GS
= 10V,
R
GS
= 25Ω
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 25A
I
SD
= 25A, dI
SD
/dt = 100A/µs
MIN
0.6
-
TYP
-
-
MAX
1.8
1700
UNITS
V
ns
2-24
JANSR2N7294
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 10V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 10V, I
D
= 23A
V
GS
= 10V, I
D
= 15A
MIN
200
2.0
-
-
-
-
MAX
-
4.0
100
25
2.78
0.115
UNITS
V
V
nA
µA
V
Ω
Typical Performance Curves
28
Unless Otherwise Specified
100
24
20
I
D
, DRAIN (A)
16
12
8
4
0
-50
0.1
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
100µs
10
1ms
10ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100ms
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
2-25
JANSR2N7294
Typical Performance Curves
10
Unless Otherwise Specified
(Continued)
NORMALIZED
THERMAL RESPONSE (Z
θ
JC
)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-4
10
-3
10
-2
10
-1
10
0
10
1
P
DM
t
1
t
2
0.01
0.001
10
-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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