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VP1306N3P006

Description
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size120KB,4 Pages
ManufacturerSupertex
Download Datasheet Parametric View All

VP1306N3P006 Overview

Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VP1306N3P006 Parametric

Parameter NameAttribute value
MakerSupertex
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.15 A
Maximum drain-source on-resistance25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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