2N3439 thru 2N3440
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/368
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi
also offers numerous other transistor products to meet higher and lower power ratings with
various switching speed requirements in both through-hole and surface-mount packages.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
JEDEC registered 2N3439 through 2N3440 series.
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368.
RoHS compliant versions available (commercial grade only).
V
CE(sat)
= 0.5 V @ I
C
= 50 mA.
Turn-On time t
on
= 1.0 µs max @ I
C
= 20 mA, I
B1
= 2.0 mA.
Turn-Off time t
off
= 10 µs max @ I
C
= 20 mA, I
B1
= -I
B2
= 2.0 mA.
TO-39
(TO-205AD)
Package
Also available in:
TO-5 package
(long leaded)
2N3439L – 2N3440L
APPLICATIONS / BENEFITS
•
•
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
U4 package
(surface mount)
2N3439U4 – 2N3440U4
UA package
(surface mount)
2N3439UA - 2N3440UA
MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(2)
@ T
C
= +25°C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
2N3439
350
450
7.0
1.0
0.8
5.0
2N3440
250
300
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
-65 to +200
Notes:
1. Derate linearly @ 4.57mW/°C for T
A
> +25°C.
2. Derate linearly @ 28.5mW/°C for T
C
> +25°C
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
Page 1 of 6
2N3439 thru 2N3440
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip or RoHS compliant pure tin (commercial grade only) plate over gold.
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: NPN (see package outline).
WEIGHT: Approximately 1.064 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N3439
(e3)
RoHS Compliance (available
on commercial grade only)
e3 = RoHS compliant with pure
tin plate
e4 = RoHS compliant with gold
plate
Blank = non-RoHS compliant
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
Page 2 of 6
2N3439 thru 2N3440
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
R
BB1
= 470
Ω;
V
BB1
= 6 V
L = 25 mH (min); f = 30 – 60 Hz
Collector-Emitter Cutoff Current
V
CE
= 300 V
V
CE
= 200 V
Emitter-Base Cutoff Current
V
EB
= 7.0 V
Collector-Emitter Cutoff Current
V
CE
= 450 V, V
BE
= -1.5 V
V
CE
= 300 V, V
BE
= -1.5 V
Collector-Base Cutoff Current
V
CB
= 360 V
V
CB
= 250 V
V
CB
= 450 V
V
CB
= 300 V
ON CHARACTERISTICS
(1)
Parameters / Test Conditions
Forward-Current Transfer Ratio
I
C
= 20 mA, V
CE
= 10 V
I
C
= 2.0 mA, V
CE
= 10 V
I
C
= 0.2 mA, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 4.0 mA
Base-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 4.0 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 5.0 MHz
Forward Current Transfer Ratio
I
C
= 5.0 mA, V
CE
= 10 V, f = 1.0 kHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V
CB
= 5.0 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Symbol
Min.
40
30
10
Max.
160
Unit
Symbol
2N3439
2N3440
2N3439
2N3440
V
(BR)CEO
Min.
350
250
2.0
2.0
10
5.0
5.0
2.0
2.0
5.0
5.0
Max.
Unit
V
I
CEO
I
EBO
µA
µA
µA
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
I
CEX
I
CBO
µA
h
FE
V
CE(sat)
V
BE(sat)
0.5
1.3
V
V
Symbol
|h
fe
|
h
fe
C
obo
C
ibo
Min.
3.0
25
Max.
15
Unit
10
75
pF
pF
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
Page 3 of 6
2N3439 thru 2N3440
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted) continued
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
CC
= 200 V; I
C
= 20 mA, I
B1
= 2.0 mA
Turn-Off Time
V
CC
= 200 V; I
C
= 20 mA, I
B1
= -I
B2
= 2.0 mA
Symbol
t
on
t
off
Min.
Max.
1.0
10
Unit
µs
µs
SAFE OPERATING AREA
(See graph below and also reference test method 3053 of
MIL-STD-750.)
DC Tests
T
C
= +25 °C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 5.0 V, I
C
= 1.0 A
Both Types
Test 2
V
CE
= 350 V, I
C
= 14 mA
2N3439
Test 3
V
CE
= 250 V, I
C
= 20 mA
2N3440
I
C
– Collector Current (mA)
V
CE
– Collector to Emitter Voltage (V)
Maximum Safe Operating graph (continuous dc)
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
Page 4 of 6
2N3439 thru 2N3440
GRAPHS
DC Operation Maximum Rating (W)
T
C
(
C
) (Case)
o
FIGURE 1
Temperature-Power Derating Curve
NOTES:
Thermal Resistance Junction to Case = 30.0
o
C/W
Max Finish-Alloy Temp = 175.0
o
C
THETA (
o
C/W)
.1
10-5
.1
10-4
.1
10-3
.1
10-2
.1
TIME (s)
10-1
0.1
1
10
100
FIGURE 2
Maximum Thermal Impedance
NOTE:
T
C
= +25 °C, P
T
= 5.0 W, thermal resistance R
θJC
= 30 °C/W, steel.
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
Page 5 of 6
PCB Design
京公网安备 11010802033920号
EEWORLD
