JANS2N3439E4 datasheet, PDF - EEWORLD Datasheet

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JANS2N3439E4: Description1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD; Categorysemiconductor Discrete semiconductor; File Size271KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANS2N3439E4 Overview

1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD

JANS2N3439E4 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum on-time	1000 ns
Maximum off time	10000 ns
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	350 V
Processing package description	TO-39, 3 PIN
state	ACTIVE
packaging shape	round
Package Size	cylindrical
Terminal form	Wire
terminal coating	tin lead
Terminal location	BOTTOM
Packaging Materials	Metal
structure	single
Shell connection	COLLECTOR
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	0.8000 W
Transistor type	Universal small signal
Minimum DC amplification factor	40

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2N3439 thru 2N3440

NPN LOW POWER SILICON

TRANSISTOR

Qualified per MIL-PRF-19500/368

DESCRIPTION

This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi

also offers numerous other transistor products to meet higher and lower power ratings with

various switching speed requirements in both through-hole and surface-mount packages.

Available on

commercial

versions

Qualified Levels:

JAN, JANTX,

JANTXV and JANS

Important:

For the latest information, visit our website

http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N3439 through 2N3440 series.

JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368.

RoHS compliant versions available (commercial grade only).

CE(sat)

= 0.5 V @ I

= 50 mA.

Turn-On time t

= 1.0 µs max @ I

= 20 mA, I

= 2.0 mA.

Turn-Off time t

off

= 10 µs max @ I

= 20 mA, I

= -I

= 2.0 mA.

TO-39

(TO-205AD)

Package

Also available in:

TO-5 package

(long leaded)

2N3439L – 2N3440L

APPLICATIONS / BENEFITS

•

General purpose transistors for medium power applications requiring high frequency switching and

low package profile.

Military and other high-reliability applications.

U4 package

(surface mount)

2N3439U4 – 2N3440U4

UA package

(surface mount)

2N3439UA - 2N3440UA

MAXIMUM RATINGS

= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

@ T

= +25°C

(2)

@ T

= +25°C

(1)

Symbol

CEO

CBO

EBO

, T

stg

2N3439

350

450

7.0

1.0

0.8

5.0

2N3440

250

300

Unit

°C

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Operating & Storage Junction Temperature Range

-65 to +200

Notes:

1. Derate linearly @ 4.57mW/°C for T

> +25°C.

2. Derate linearly @ 28.5mW/°C for T

> +25°C

LDS-0022, Rev. 4 (111683)

Page 1 of 6

JANS2N3439E4 Related Products

	JANS2N3439E4	JAN2N3439E3	JAN2N3439E4	JANS2N3439E3	JANS2N3440	JANTXV2N3439	JANTXV2N3439E3	JANTXV2N3439E4	JAN2N3439
Description	1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN	1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
Number of terminals	3	3	3	3	3	3	3	3	3
Terminal form	Wire	Wire	Wire	Wire	WIRE	WIRE	Wire	Wire	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Number of components	1	1	1	1	1	1	1	1	1
Transistor component materials	silicon	silicon	silicon	silicon	SILICON	SILICON	silicon	silicon	SILICON
Transistor polarity	NPN	NPN	NPN	NPN	-	-	NPN	NPN	-
Maximum on-time	1000 ns	1000 ns	1000 ns	1000 ns	-	-	1000 ns	1000 ns	-
Maximum off time	10000 ns	10000 ns	10000 ns	10000 ns	-	-	10000 ns	10000 ns	-
Maximum collector current	1 A	1 A	1 A	1 A	-	-	1 A	1 A	-
Maximum Collector-Emitter Voltage	350 V	350 V	350 V	350 V	-	-	350 V	350 V	-
Processing package description	TO-39, 3 PIN	TO-39, 3 PIN	TO-39, 3 PIN	TO-39, 3 PIN	-	-	TO-39, 3 PIN	TO-39, 3 PIN	-
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-	-	ACTIVE	ACTIVE	-
packaging shape	round	round	round	round	-	-	round	round	-
Package Size	cylindrical	cylindrical	cylindrical	cylindrical	-	-	cylindrical	cylindrical	-
terminal coating	tin lead	tin lead	tin lead	tin lead	-	-	tin lead	tin lead	-
Packaging Materials	Metal	Metal	Metal	Metal	-	-	Metal	Metal	-
structure	single	single	single	single	-	-	single	single	-
Maximum ambient power consumption	0.8000 W	0.8000 W	0.8000 W	0.8000 W	-	-	0.8000 W	0.8000 W	-
Transistor type	Universal small signal	Universal small signal	Universal small signal	Universal small signal	-	-	Universal small signal	Universal small signal	-
Minimum DC amplification factor	40	40	40	40	-	-	40	40	-

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