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MPS6507ZL1

Description
Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size290KB,32 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPS6507ZL1 Overview

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

MPS6507ZL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC, TO-226AA, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity2.5 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
NPN Silicon
2
BASE
COLLECTOR
3
MPS6507
1
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
20
30
3.0
50
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 60°C)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
50
1.0
nAdc
m
Adc
20
30
3.0
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 2.0 mAdc, VCE = 10 Vdc)
hFE
25
75
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300
m
s; Duty Cycle
2.0%.
fT
Cobo
hfe
700
20
800
1.25
2.5
MHz
pF
v
v
2–582
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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Description Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP RF Small Signal TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP RF Small Signal TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP RF Small Signal
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92
package instruction PLASTIC, TO-226AA, 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 PLASTIC, TO-226AA, 3 PIN
Contacts 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Collector-based maximum capacity 2.5 pF 2.5 pF 2.5 pF 2.5 pF 2.5 pF
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 800 MHz 800 MHz 800 MHz 800 MHz 800 MHz
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