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3Z82TPA2

Description
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size77KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3Z82TPA2 Overview

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

3Z82TPA2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage90.2 V
Minimum breakdown voltage73.8 V
Breakdown voltage nominal value82 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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