HN58C66T-25 datasheet, PDF - EEWORLD Datasheet

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HN58C66T-25: DescriptionEEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, TSOP-32; Categorystorage storage; File Size119KB，18 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HN58C66T-25 Overview

EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, TSOP-32

HN58C66T-25 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP32,.56,20
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	250 ns
Other features	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE
command user interface	NO
Data polling	YES
Data retention time - minimum	10
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	12.4 mm
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	32 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Maximum standby current	0.001 A
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	NO
width	8 mm

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HN58C66 Series

8192-word

8-bit CMOS Electrically Erasable and Programmable

CMOS ROM

ADE-203-375F (Z)

Rev. 6.0

Apr. 12, 1995

Description

The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as 8192-word

8-bit. It

realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS

memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming

function to make its erase and write operations faster.

Features

•

Single 5 V supply

On chip latches: address, data,

CE, OE, WE

Automatic byte write: 10 ms max

Automatic page write (32 bytes): 10 ms max

High speed: Access time 250 ns max

Low power dissipation:

20 mW/MHz typ (active)

2.0 mW typ (standby)

Data

polling, RDY/Busy

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

erase/write cycles (in page mode)

10 years data retension

Write protection by

RES

•

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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