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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAW62
High-speed diode
Product data sheet
Supersedes data of April 1996
1996 Sep 17
NXP Semiconductors
Product data sheet
High-speed diode
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 450 mA.
The diode is type branded.
handbook, halfpage
k
BAW62
DESCRIPTION
The BAW62 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
a
MAM246
APPLICATIONS
•
High-speed switching
•
Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
μs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
350
+200
200
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
MIN.
−
−
−
−
MAX.
75
75
250
450
V
V
mA
mA
UNIT
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
1996 Sep 17
2
NXP Semiconductors
Product data sheet
High-speed diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 5 mA
I
F
= 100 mA
I
F
= 100 mA; T
j
= 100
°C
I
R
reverse current
see Fig.5
V
R
= 20 V
V
R
= 50 V
V
R
= 75 V
V
R
= 20 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.7
when switched from I
F
= 50 mA;
t
r
= 20 ns; see Fig.8
−
−
−
−
−
−
−
25
200
5
50
100
2
4
620
−
−
750
1 000
930
CONDITIONS
MIN.
BAW62
MAX.
UNIT
mV
mV
mV
nA
nA
μA
μA
μA
pF
ns
V
fr
forward recovery voltage
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
500
UNIT
K/W
K/W
1996 Sep 17
3
NXP Semiconductors
Product data sheet
High-speed diode
GRAPHICAL DATA
BAW62
handbook, halfpage
300
MBG448
handbook, halfpage
600
MBG464
IF
(mA)
200
IF
(mA)
400
(1)
(2)
(3)
100
200
0
0
100
Tamb ( C)
o
0
200
0
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
10
10
2
10
3
tp (μs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
4
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