BAS35S62Z datasheet, PDF - EEWORLD Datasheet

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BAS35S62Z: DescriptionRectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size29KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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BAS35S62Z Overview

Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon

BAS35S62Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	120 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

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BAS35

Connection Diagram

L22

SOT-23

Small Signal Diode

Absolute Maximum Ratings*

Symbol

RRM

F(AV)

FSM

= 25°C unless otherwise noted

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

Value

120

200

1.0

2.0

-55 to +150

150

Units

°C

stg

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 150 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJA

Power Dissipation

Thermal Resistance, Junction to Ambient

= 25°C unless otherwise noted

Parameter

Value

350

357

Units

°C/W

Electrical Characteristics

Symbol

Parameter

Breakdown Voltage

Forward Voltage

Test Conditions

= 1.0 mA

= 10 mA

= 50 mA

= 100 mA

= 200 mA

= 400 mA

= 90 V

= 90 V, T

= 150°C

= 0, f = 1.0 MHz

= I

= 10 mA, I

= 1.0 mA,

= 100

Ω

Min

120

Max

750

840

900

1.0

1.25

100

Units

µA

Reverse Current

Total Capacitance

Reverse Recovery Time

2001

Fairchild Semiconductor Corporation

BAS35, Rev. C

BAS35S62Z Related Products

	BAS35S62Z	BAS35L99Z	BAS35D87Z
Description	Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon	Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon	Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	2	2	2
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Maximum output current	0.2 A	0.2 A	0.2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	120 V	120 V	120 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maker	Fairchild	-	Fairchild

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