BLF888E; BLF888ES
UHF power LDMOS transistor
Rev. 1 — 17 March 2016
Objective data sheet
1. Product profile
1.1 General description
A 750 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The
excellent ruggedness of this device makes it ideal for digital and analog transmitter
applications.
Table 1.
Application information
RF performance at V
DS
= 50 V in an asymmetrical Doherty application.
Test signal
DVB-T (8k OFDM)
f
(MHz)
470 to 590
580 to 690
650 to 790
[1]
P
L(AV)
(W)
150
<tbd>
150
G
p
(dB)
17
<tbd>
15
D
(%)
52
<tbd>
49
IMD
shldr
(dBc)
38
<tbd>
38
PAR
(dB)
8
[1]
<tbd>
8
[1]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Designed for asymmetric Doherty operation
High efficiency
Integrated ESD protection
Excellent ruggedness
High power gain
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
BLF888E; BLF888ES
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1 (peak)
drain2 (main)
gate1 (peak)
gate2 (main)
source
[1]
Simplified outline
Graphic symbol
BLF888E (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLF888ES (SOT539B)
1
2
3
4
5
drain1 (peak)
drain2 (main)
gate1 (peak)
gate2 (main)
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF888E
BLF888ES
-
-
earless flanged balanced ceramic package; 4 leads
Version
SOT539B
Type number Package
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS(amp)main
V
DS(amp)peak
V
GS(amp)main
V
GS(amp)peak
T
stg
T
j
[1]
BLF888E_BLF888ES
Parameter
main amplifier drain-source voltage
peak amplifier drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
-
0.5
6
65
[1]
Max
104
120
+11
+11
+150
225
Unit
V
V
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Objective data sheet
Rev. 1 — 17 March 2016
2 of 11
BLF888E; BLF888ES
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
[1]
Thermal characteristics
Conditions
T
case
= 80
C;
P
L
= 150 W
[1]
Symbol Parameter
thermal resistance from junction to case
Typ
Unit
<tbd> K/W
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
Main device
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.4 mA
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
104
1.4
-
-
-
-
-
1.9
-
38
-
120
-
2.4
2.8
-
280
-
V
V
A
A
nA
m
Conditions
Min
Typ
Max
Unit
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.5 A
Peak device
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.6 mA
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
V
DS
= 10 V; I
D
= 360 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
120
1.4
-
-
-
-
-
1.9
-
57
-
90
-
2.4
2.8
-
280
-
V
V
A
A
nA
m
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 12.6 A
Table 7.
AC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
Main device
C
iss
C
oss
C
rss
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
210
67
1.35
315
105
1.5
-
-
-
-
-
-
pF
pF
pF
pF
pF
pF
Conditions
Min Typ
Max Unit
reverse transfer capacitance V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
input capacitance
output capacitance
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
Peak device
reverse transfer capacitance V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Objective data sheet
Rev. 1 — 17 March 2016
3 of 11
BLF888E; BLF888ES
UHF power LDMOS transistor
Table 8.
RF characteristics
RF characteristics in Ampleon production test circuit, T
case
= 25
C; unless otherwise specified.
Symbol Parameter
DVB-T (8k OFDM), class-AB
V
DS
I
Dq
P
L(AV)
G
p
D
PAR
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
peak-to-average ratio
peak section: V
GS
= 1.3 V
below V
GS(th)
(peak)
f = 550 MHz
f = 550 MHz
f = 550 MHz
f = 550 MHz
-
-
-
47
-
-
50
-
V
mA
W
dB
%
dBc
dB
600 -
150 -
-
-
-
52
7.8
Conditions
Min
Typ Max Unit
15.3 17
IMD
shldr
intermodulation distortion shoulder f = 550 MHz
24 21
7. Test information
7.1 Ruggedness in Doherty operation
The BLF888E and BLF888ES are capable of withstanding a load mismatch corresponding
to VSWR
<tbd> through all phases under the following conditions: V
DS
= <tbd> V;
f = <tbd> MHz at rated load power.
7.2 Test circuit
95 mm
C13
C11
L1
C3 C4
C1
80 mm
R1
R2
C5 C6
R6
L3
C20
R10
L5
C22
R12
95 mm
C24
C2
R3 R5
C7
R4
C8 C9 C10
R7
L2
C12
C14
L6
C21
L4
R11
C23
C25
C26
amp00021
Printed-Circuit Board (PCB): Rogers 3006;
r
= 6.5 F/m; height = 0.635 mm; Cu (top/bottom metalization); thickness copper
plating = 29.6
m;
Rogers 3010:
r
= 10 F/m; height = 0.254 mm
See
Table 9
for a list of components.
Fig 1.
Component layout for production RF test circuit
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Objective data sheet
Rev. 1 — 17 March 2016
4 of 11
BLF888E; BLF888ES
UHF power LDMOS transistor
Table 9.
List of components
For test circuit see
Figure 1.
Component
C1, C2
C3
C4
C5, C6
C7
C8
C9
C10
C11, C12
C13, C14
C20, C21
C22, C23
C25, C25
C26
L1, L2
L3, L4
L5, L6
R1
R2
R3, R4
R5
R6
R7
R10, R11
R12
[1]
[2]
Description
Value
[1]
[1]
[1]
[1]
[1]
[2]
[1]
[1]
[1]
Remarks
ATC 100B
ATC 100B
ATC 100B
ATC 100B
ATC 100B
ATC 100A
ATC 100B
ATC 100B
ATC 100B
ATC 100B
multilayer ceramic chip capacitor 51 pF
multilayer ceramic chip capacitor 11 pF
multilayer ceramic chip capacitor 13 pF
multilayer ceramic chip capacitor 24 pF
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 51 pF
multilayer ceramic chip capacitor 12 pF
multilayer ceramic chip capacitor 20 pF
multilayer ceramic chip capacitor 43 pF
multilayer ceramic chip capacitor 4.7
F
electrolytic capacitor
electrolytic capacitor
inductor
inductor
inductor
chip resistor
chip resistor
chip resistor
chip resistor
chip resistor
chip resistor
wire resistor
shunt resistor
100 pF
470
F,
63 V
[1]
multilayer ceramic chip capacitor 4.7
F,
100 V
multilayer ceramic chip capacitor 47 pF
10 nH
0.5 turn, D = 2 mm,
d = 1mm
1 turn, D = 5 mm,
d = 1mm
90
265
360
15
75
5
1
0.01
[1]
ATC 100B
Coilcraft
American Technical Ceramics type 100B or capacitor of same quality
American Technical Ceramics type 100A or capacitor of same quality
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Objective data sheet
Rev. 1 — 17 March 2016
5 of 11
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