PROCESS
Ultra Fast Rectifier
CPD16
1 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GLASS PASSIVATED MESA
51 x 51 MILS
14 MILS
34 x 34 MILS
Ni/Au - 5,000Å/2,000Å
Ni/Au - 5,000Å/2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
4,250
PRINCIPAL DEVICE TYPES
UES1001 thru UES1003
UF4001 thru UF4007
CMR1U-01 Series
CMR1U-01M Series
BACKSIDE CATHODE
R4 (22-March 2010)
w w w. c e n t r a l s e m i . c o m