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CPD16-UES1001-CM

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size388KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CPD16-UES1001-CM Overview

Rectifier Diode,

CPD16-UES1001-CM Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
PROCESS
Ultra Fast Rectifier
CPD16
1 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GLASS PASSIVATED MESA
51 x 51 MILS
14 MILS
34 x 34 MILS
Ni/Au - 5,000Å/2,000Å
Ni/Au - 5,000Å/2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
4,250
PRINCIPAL DEVICE TYPES
UES1001 thru UES1003
UF4001 thru UF4007
CMR1U-01 Series
CMR1U-01M Series
BACKSIDE CATHODE
R4 (22-March 2010)
w w w. c e n t r a l s e m i . c o m

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