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BAR5000

Description
Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size134KB,1 Pages
ManufacturerDiotec Electronics Corp
Environmental Compliance
Download Datasheet Parametric Compare View All

BAR5000 Overview

Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon,

BAR5000 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiotec Electronics Corp
package instructionO-PEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PEDB-N2
Maximum non-repetitive peak forward current720 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current50 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
DIOTEC ELECTRONICS CORP
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BUDI-5000-1A
FEATURES
MECHANICAL SPECIFICATION
R
PROPRIETARY
SOFT GLASS
JUNCTION
PASSIVATION FOR SUPERIOR RELIABILITY AND
PERFORMANCE
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
Compact molded design
High surge current, 720 A @ T
J
= 175 C
Low cost
Peak performance at elevated temperatures: 50 A
o
@ T
J
= 175 C
o
Die Size:
0.180" x 0.180"
Square
D
A
M
Color Ring
Denotes Cathode
F
B
MECHANICAL DATA
Case: Transfer molded plastic
Finish: All external surfaces are corrosion resistant
and the contact areas are readily solderable
Soldering Temperature: 250
o
C maximum
Mounting Position: Any
Polarity: Color band denotes cathode
Weight: 0.6 Ounces (1.8 Grams)
MILLIMETERS
DIM
A
B
D
F
M
MIN
9.78
6.05
5.54
4.19
MAX
10.29
6.20
6.60
4.45
INCHES
MIN
0.385
0.238
0.218
0.165
MAX
0.405
0.244
0.220
0.175
5° NOM
5° NOM
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified.
PARAMETER (TEST CONDITIONS)
Series Number
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Peak Recurrent Reverse Voltage
Non-repetitive Peak Reverse Voltage (Half wave, single phase,
60 Hz peak)
Average Forward Rectified Current @ T
C
=125
o
C
Peak Forward Surge Current (8.3mS single half sine wave
superimposed on rated load)
Repetitive Peak Reverse Surge Current (Half wave, single phase,
60 Hz applied to rated load)
Maximum Forward Voltage Drop at 50 Amp DC
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
Junction Operating and Storage Temperature Range
Notes: 1) Single Side Cooled
@ T
A
= 25 C
@ T
A
= 100
o
C
o
SYMBOL
BAR
5000
V
RRM
V
RWM
V
DC
V
RSM
I
O
I
FSM
I
RSM
V
FM
I
RM
R
θJC
T
J
,T
STG
60
120
240
50
100
200
BAR
5001
RATINGS
BAR
5002
BAR
5004
400
BAR
5006
600
BAR
5008
800
BAR
5010
1000
UNITS
VOLTS
480
50
720
120
720
960
1200
AMPS
1.1 (Typical 0.95)
1
50
0.8
-65 to +175
1.2
VOLTS
µA
°C/W
°C
BAR50
Maximum Thermal Resistance, Junction to Case (Note 1)
K11

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BAR5000 BAR5004 BAR5006 BAR5010 BAR5002 BAR5008 BAR5001
Description Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 50A, 1000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.2 V 1.1 V 1.2 V 1.1 V
JESD-30 code O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Maximum non-repetitive peak forward current 720 A 720 A 720 A 720 A 720 A 720 A 720 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 400 V 600 V 1000 V 200 V 800 V 100 V
surface mount YES YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END END END END
Maker Diotec Electronics Corp - Diotec Electronics Corp - Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp
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