Operating Temperature Range..............................-40°C to +125°C
Storage Temperature Range .................................-65°C to +150°C
Junction Temperature ...........................................................+150°C
Lead Temperature (soldering, 10s)......................................+300°C
Soldering Temperature (reflow)............................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
Junction-to-Ambient Thermal Resistance (θ
JA
)...............42°C/W
Junction-to-Case Thermal Resistance (θ
JC
)......................9°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
DD
= 4V to 15V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= 15V and T
A
= +25°C.) (Note 1)
PARAMETER
POWER SUPPLY
V
DD
Operating Range
V
DD
Undervoltage Lockout
V
DD
Undervoltage Lockout
Hysteresis
V
DD
Undervoltage Lockout to
Output Delay
V
DD
Supply Current
DRIVER OUTPUT (SINK)
Driver Output Resistance Pulling
Down
Peak Output Current (Sinking)
Output-Voltage Low
Latchup Protection
DRIVER OUTPUT (SOURCE)
Driver Output Resistance Pulling
Up
Peak Output Current (Sourcing)
V
DD
= 15V,
I
OUT
= 100mA
V
DD
= 4.5V,
I
OUT
= 100mA
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
1.5
1.9
2.75
3.75
4
2.1
2.75
4
5.5
A
Ω
I
LUP
V
DD
= 15V,
I
OUT
= -100mA
V
DD
= 4.5V,
I
OUT
= -100mA
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
V
DD
= 4.5V
V
DD
= 15V
400
1.1
1.5
2.2
3.0
4
0.45
0.24
1.8
2.4
3.3
4.5
A
V
mA
Ω
I
DD
I
DD-SW
V
DD
rising
V
IN+
= 0V, IN- = V
DD
(not switching)
V
DD
= 4V
V
DD
= 15V
0.5
V
DD
UVLO
V
DD
rising
4
3.00
3.5
200
12
28
40
1.2
55
75
2.2
15
3.85
V
V
mV
µs
µA
mA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Switching at 250kHz, C
L
= 0
R
ON-N
I
PK-N
V
DD
= 15V, C
L
= 10,000pF
I
OUT
= -100mA
Reverse current I
OUT
(Note 2)
R
ON-P
I
PK-P
V
DD
= 15V, C
L
= 10,000pF
2
Maxim Integrated
MAX5078
4A, 20ns, MOSFET Driver
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 4V to 15V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= 15V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
V
DD
= 4.5V
Output-Voltage High
I
OUT
= 100mA
V
DD
= 15V
LOGIC INPUT
(Note 3)
Logic 1 Input Voltage
V
IH
MAX5078A
MAX5078B (Note 4)
Logic 0 Input Voltage
V
IL
MAX5078A
MAX5078B
Logic-Input Hysteresis
Logic-Input-Current Leakage
Input Capacitance
C
IN
C
L
= 1000pF
OUT Rise Time
t
R
C
L
= 5000pF
C
L
= 10,000pF
C
L
= 1000pF
OUT Fall Time
Turn-On Delay Time
Turn-Off Delay Time
t
F
t
D-ON
t
D-OFF
C
L
= 5000pF
C
L
= 10,000pF
C
L
= 10,000pF (Note 2)
C
L
= 10,000pF (Note 2)
C
L
= 1000pF
OUT Rise Time
t
R
C
L
= 5000pF
C
L
= 10,000pF
C
L
= 1000pF
OUT Fall Time
Turn-On Delay Time
Turn-Off Delay Time
t
F
t
D-ON
t
D-OFF
C
L
= 5000pF
C
L
= 10,000pF
C
L
= 10,000pF (Note 2)
C
L
= 10,000pF (Note 2)
18
18
10
10
V
HYS
MAX5078A
MAX5078B
V
IN+
= V
IN-
= 0V or V
DD
-1
0.1 x
V
DD
0.3
+0.1
2.5
4
18
32
4
15
26
20
20
7
37
85
7
30
75
35
35
70
70
ns
ns
ns
ns
34
34
ns
ns
ns
ns
+1
µA
pF
0.7 x
V
DD
2.1
0.3 x
V
DD
0.8
V
V
V
MIN
V
DD
-
0.55
V
V
DD
-
0.275
TYP
MAX
UNITS
SWITCHING CHARACTERISTICS FOR V
DD
= 15V
(Figure 1)
SWITCHING CHARACTERISTICS FOR V
DD
= 4.5V
(Figure 1)
Maxim Integrated
3
MAX5078
4A, 20ns, MOSFET Driver
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 4V to 15V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= 15V and T
A
= +25°C.) (Note 1)
PARAMETER
MATCHING CHARACTERISTICS
Mismatch Propagation Delays from
Inverting and Noninverting Inputs to
Output
∆t
ON-OFF
V
DD
= 15V, C
L
= 10,000pF
V
DD
= 4.5V, C
L
= 10,000pF
2
ns
4
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Note 1:
Note 2:
Note 3:
Note 4:
All devices are 100% tested at T
A
= +25°C. Specifications over -40°C to +125°C are guaranteed by design.
Limits are guaranteed by design, not production tested.
Output is the value of the sine wave in ROMHow to set the output to output in waveform (sine wave)[[i]This post was last edited by wzyuliyang on 2011-11-23 21:37[/i]]...
[table=95%][tr][td]This is a circuit reverse-designed from a foreign device. It has a 4-20mA output function. Please help analyze its working principle. [/td][/tr][/table][align=center][img]http://bbs...
[i=s]This post was last edited by hejecu on 2018-10-31 07:45[/i] [b][b][font=宋体][size=22pt][font=宋体] Chapter 2[/font] Cube[font=宋体]Library Introduction[/font][/size][/font][/b][/b][b][b][font=宋体][size...
I have a client who wants to deploy multiple devices on the assembly line through a thin client + touch screen to display some report data in real time. However, after testing, it was found that the t...
I recently looked at the hercules series. It strikes me as complex. Apart from having two CPUs, I feel like there is too much of everything. First, there are three product series: The software for the...
The Sino-US trade war has already started. Trump's series of actions have had a negative impact on the global economy, such as increasing tariffs on Chinese companies and restricting domestic compa...[Details]
Recently, the U.S. Department of Commerce announced that it would prohibit companies in the country from selling any electronic technology or communication components to ZTE, a Chinese communicatio...[Details]
In the actual project development process, hardware circuits often need to be modified, and the modified parts need to modify the driver. Thinking about the coming and going of such requirements is t...[Details]
In the actual project development process, it is common to encounter modifications to the hardware circuit, and then the modified part requires the modification of the driver. Thinking about the comi...[Details]
All relevant units:
In accordance with the relevant requirements of the provincial and municipal electric vehicle charging infrastructure construction work, in order to further standardize the...[Details]
In simple terms, high-end chips solve many complex problems, mid-range chips solve a single complex problem, and low-end chips solve a simple problem. Let's learn more about the relevant content wi...[Details]
Friends who work in the photovoltaic industry, do you still remember the hard work on June 30 last year? How many people worked late into the night for months in a row just to connect to the grid a...[Details]
stm32cubeMX graphical configuration content STM32CubeMX is part of the original STMCube initiative from st microelectronics, and STM32Cube includes STM32CubeMX. STM32CubeMX is a graphical software co...[Details]
LAN8720 test code arrangement 1. Modified based on two projects, namely "Experiment 55 Network Communication Experiment" of Zhengdian Atom ATK and "STSW-STM32070" routine of ST official The hardware ...[Details]
1. Initial understanding of FSMC: FSMC consists of 4 modules: (1) AHB interface (including FSMC configuration register) (2) NOR flash memory and PSRAM controller (when driving LCD, LCD is like a PSRA...[Details]
The F1 racetrack is roaring with engines, and a fierce F1 race is about to begin. I am not a fan of racing cars, and I have nothing to do with this world, but
I spent a special day here
because...[Details]
The adoption rate of serverless
cloud
computing
is gradually increasing, but it has not yet reached people's expectations. Various surveys show that serverless
is
still
an eme...[Details]
This small program is still the use of timer, which is relatively simple. The specific parts are noted in the comments, please refer to the comments. /*********************************************...[Details]