ADVANCE TECHNICAL INFORMATION
DSEE 6-06CC
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
I
FAV
= 6 A
V
RRM
= 600 V
t
rr
= 20 ns
V
RRM
V
600
V
RRM
V
300
Type
ISOPLUS 220
E153432
DSEE 6-06CC
1
2
3
Symbol
I
FRMS
I
FAVM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 150°C; rectangular, d = 0.5
T
VJ
= 25°C; non-repetitive
I
AS
= 0.8 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
20
6
0.1
0.1
A
A
mJ
A
Isolated back surface*
Features
-40...+175
175
-40...+150
w
2500
2
T
C
= 25°C
50/60 Hz RMS; I
ISOL
≤
1 mA
Mounting force
typical
50
ne
r
fo
t
0.6
20
2
11...65 / 2.4...11 N / lb
g
Symbol
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 10 A;
Characteristic Values
typ.
max.
25
0.2
1.35
1.8
3.0
µA
mA
V
V
K/W
K/W
ns
A
No
T
VJ
= 125°C
T
VJ
= 25°C
I
F
= 1 A; -di/dt = 50 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
µs,
Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
de
si
°C
°C
°C
W
λ
λ
λ
λ
λ
λ
λ
V~
Recommended replacement:
DSEE8-08CC
gn
λ
λ
λ
λ
λ
λ
λ
λ
λ
λ
λ
λ
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
DS98915B(07/03)
20080317a
© 2003 IXYS All rights reserved
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