DSEP60-12AZ
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
=
1200 V
60 A
40 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP60-12AZ
Marking on Product: DSEP60-12AZ
Backside: cathode
1
3
4
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-268AA (D3Pak-HV)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220d
© 2019 IXYS all rights reserved
DSEP60-12AZ
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
1.08
9.4
0.15
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 600 V f = 1 MHz
I
F
=
t
rr
reverse recovery time
Ratings
min.
typ.
max. Unit
1200
V
1200
650
2.5
2.66
3.18
1.81
2.40
60
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
330
500
30
13
20
80
220
W
A
pF
A
A
ns
ns
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
60 A
60 A
forward voltage drop
I
F
= 120 A
I
F
= 120 A
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
average forward current
T
C
= 115 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
0.45 K/W
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
60 A; V
R
= 600 V
-di
F
/dt = 200 A/µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220d
© 2019 IXYS all rights reserved
DSEP60-12AZ
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-268AA (D3Pak-HV)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
70
175
150
150
Unit
A
°C
°C
°C
g
N
mm
mm
4
20
9.4
5.6
120
Product Marking
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
Zyyww
abcd
Ordering
Standard
Ordering Number
DSEP60-12AZ-TUB
Marking on Product
DSEP60-12AZ
Delivery Mode
Tube
Quantity
30
Code No.
522712
Similar Part
DSEP90-12AZ
DSEI120-12AZ
Package
TO-268AA (D3Pak) (2HV)
TO-268AA (D3Pak) (2HV)
Voltage class
1200
1200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
1.08
6.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220d
© 2019 IXYS all rights reserved
DSEP60-12AZ
Outlines TO-268AA (D3Pak-HV)
Millimeter
min
max
4.90
5.10
2.70
2.90
0.02
0.25
1.15
1.45
0.40
0.65
1.45
1.60
13.80 14.00
11.80 12.10
7.50
7.80
2.90
3.20
15.85 16.05
13.30 13.60
5.450 BSC
18.70 19.10
1.70
2.00
1.00
1.15
0.250 BSC
3.80
4.10
Inches
min
max
0.193 0.201
0.106 0.114
0.001 0.010
0.045 0.057
0.016 0.026
0.057 0.063
0.543 0.551
0.465 0.476
0.295 0.307
0.114 0.126
0.624 0.632
0.524 0.535
0.215 BSC
0.736 0.752
0.067 0.079
0.039 0.045
0.010 BSC
0.150 0.161
Dim.
A
A1
A2
b
C
C2
D
D1
D2
D3
E
E1
e
H
L
L2
L3
L4
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220d
© 2019 IXYS all rights reserved
DSEP60-12AZ
Fast Diode
100
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
10
T
VJ
= 100°C
V
R
= 600 V
8
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
80
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
100
T
VJ
= 100°C
V
R
= 600 V
80
60
6
60
I
F
40
Q
r
4
I
RM
40
[A]
20
[µC]
2
[A]
20
0
0
1
2
3
0
1 00
0
1000
0
200
400
600
800
1000
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
2.0
280
-di
F
/dt [A/µs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
120
T
VJ
= 100°C
V
R
= 600 V
-di
F
/dt [A/µs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
1.2
T
VJ
= 100°C
I
F
= 60 A
80
0.8
1.5
240
t
rr
K
f
1.0
[ns]
I
RM
0.5
Q
r
200
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
V
FR
[V]
40
t
rr
[µs]
0.4
V
FR
0.0
0
40
80
120
160
160
0
200
400
600
800
1000
0
0
200
400
600
800
t
rr
0.0
1000
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
r
, I
RM
versus T
VJ
0.5
-di
F
/dt [A/µs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/µs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
0.4
Z
thJC
0.3
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0050
0.0550
0.1750
0.2150
t
i
(s)
0.0001
0.0010
0.0140
0.2300
[K/W]
0.2
0.1
0.0
1
10
100
t [ms]
1000
10000
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220d
© 2019 IXYS all rights reserved
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