DSSK 80-006B
Power Schottky Rectifier
with common cathode
I
FAV
= 2x40 A
V
RRM
= 60 V
V
F
= 0.51 V
V
RSM
V
60
V
RRM
V
60
Type
A
C
A
TO-247 AD
DSSK 80-006B
A
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 120°C; rectangular, d = 0.5
T
C
= 120°C; rectangular, d = 0.5; per device
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
I
AS
= 20 A; L = 100 µH; T
VJ
= 25°C; non repetitive
V
A
= 1.5·V
RRM
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
40
80
600
20
2
1000
-55...+150
150
-55...+150
A
A
A
A
mJ
A
V/µs
°C
°C
°C
W
Nm
g
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low I
RM
-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
T
C
= 25°C
mounting torque
typical
155
0.8...1.2
6
Dimensions see Outlines.pdf
Symbol
I
R
V
F
Conditions
V
R
= V
RRM
;
I
F
= 40 A;
I
F
= 40 A;
I
F
= 80 A;
T
VJ
= 25°C
T
VJ
= 100°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
0.25
Pulse Width = 5 ms, Duty Cycle < 2.0%
Characteristic Values
typ.
max.
20
200
0.51
0.55
0.74
0.8
mA
mA
V
V
V
K/W
K/W
R
thJC
R
thCH
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, Conditions and dimensions.
© 2006 IXYS All rights reserved
1-2
0622
DSSK 80-006B
100
A
I
F
10000
mA
1000
T
VJ
=150°C
I
R
100
125°C
10
T
VJ
=
150°C
125°C
25°C
100°C
10000
pF
C
T
10
75°C
1000
1
50°C
0.1
25°C
0.01
100
0
10
20
30
40 50 V 60
V
R
0
10
20
30
T
VJ
= 25°C
1
0.0
0.2
0.4
0.6 V 0.8
V
F
40 50 V 60
V
R
Fig. 1 Maximum forward voltage
drop characteristics
80
A
70
I
F(AV)
60
50
40
30
20
10
0
0
40
80
T
C
120 °C 160
d = 0.5
DC
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
50
W
40
P
(AV)
30
d=
DC
0.5
0.33
0.25
0.17
0.08
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
A
I
FSM
20
10
0
0
10
20
30
40 50
I
F(AV)
60 A 70
t
P
s
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
1
Fig. 5 Forward power loss characteristics
K/W
Z
thJC
D = 0.5
0.33
0.25
0.17
0.08
Single Pulse
0.1
0.001
DSSK 80-006B
Note: All curves are per diode
1
0.01
0.1
s
t
0622
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, Conditions and dimensions.
© 2006 IXYS All rights reserved
2-2
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