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MA2J11100L

Description
0.1 A, 80 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size234KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA2J11100L Overview

0.1 A, 80 V, SILICON, SIGNAL DIODE

MA2J11100L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-F2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA2J111
(MA111)
Silicon epitaxial planar type
For switching circuits
1.25
±0.1
0.35
±0.1
0.7
±0.1
Unit: mm
M
ain
Di
sc te
on na
tin nc
ue e/
d
Allowing high-density mounting
Short reverse recovery time t
rr
Small terminal capacitance C
t
High breakdown voltage: V
R
=
80 V
1
Features
0 to 0.1
1.7
±0.1
0.16
+0.1
–0.06
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
Reverse voltage
Forward current
100
225
500
150
mA
mA
mA
°C
°C
Peak forward current
I
FM
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
I
FSM
T
j
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
Marking Symbol: 1B
T
stg
−55
to
+150
Note) *: t
=
1 s
on
Parameter
Symbol
V
F
I
R
t
rr
tin
Electrical Characteristics
T
a
=
25°C
±
3°C
ue
Conditions
Min
Typ
Max
1.20
isc
Forward voltage
Reverse voltage
Reverse current
I
F
=
100 mA
I
R
=
100
µA
V
R
=
75 V
0.95
(0.15)
Maximum peak reverse voltage
V
RM
V
R
C
t
Ma
int
en
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Publication date: March 2004
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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Rating
80
80
Unit
V
V
0 to 0.1
0.4
±0.1
2
0.5
±0.1
Unit
V
/D
80
V
ce
an
100
1.2
3
nA
pF
ns
V
R
=
0 V, f
=
1 MHz
0.6
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKF00011BED
2.5
±0.2
1

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