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MA2S30400L

Description
MA2S304 Silicon epitaxial planar type
File Size224KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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MA2S30400L Overview

MA2S304 Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
Variable Capacitance Diodes
MA2S304
Silicon epitaxial planar type
Unit: mm
For VCO
Features
Good linearity and large capacitance-ratio in C
D
V
R
relation
Small series resistance r
D
SS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
0.27
+0.05
–0.02
2
0.13
+0.05
–0.02
1.3
±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
T
j
Reverse voltage
0.15 min.
1.7
±0.1
1
0.8
±0.1
Junction temperature
Storage temperature
T
stg
−55
to
+150
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
I
R
tin
Reverse current
on
Diode capacitance
C
D(1V)
isc
C
D(4V)
r
D
Capacitance ratio
C
D(1V)
/C
D(4V)
2. Absolute frequency of input and output is 100 MHz.
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Ma
int
en
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
an
Series resistance
*
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.
Rating
30
Unit
V
°C
°C
150
0 to 0.01
EIAJ: SC-79
1: Anode
2: Cathode
SSMini2-F2 Package
Marking Symbol: K
Conditions
Min
Typ
Max
10
Unit
nA
pF
ue
V
R
=
28 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
24.8
6.0
29.8
8.3
/D
3.0
ce
V
R
=
4 V, f
=
100 MHz
1.0
0.15 max.
0.7
±0.1
0.15 min.
Publication date: March 2004
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