DGS10-022AS datasheet, PDF - EEWORLD Datasheet

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DGS10-022AS: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 9A, 220V V(RRM), Gallium Arsenide, TO-263AB,; CategoryDiscrete semiconductor diode; File Size22KB，1 Pages; ManufacturerIXYS; Environmental Compliance

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DGS10-022AS Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 9A, 220V V(RRM), Gallium Arsenide, TO-263AB,

DGS10-022AS Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Reach Compliance Code	compliant
ECCN code	EAR99
application	SOFT RECOVERY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	GALLIUM ARSENIDE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Maximum non-repetitive peak forward current	20 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Maximum output current	9 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	220 V
Maximum reverse recovery time	0.013 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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DGS 10-022AS

DGS 10-025AS

Gallium Arsenide Schottky Rectifier

Preliminary Data

I

DC

= 9A

V

RRM

= 220/250 V

t

rr

= 13 ns

V

RSM

V

220

250

V

RRM

V

220

250

Type

A

C

TO-263 AB

A

DGS 10-022AS

DGS 10-025AS

A

C (TAB)

A = Anode, C = Cathode , TAB = Cathode

Symbol

I

DC

I

FRM

I

FSM

T

VJ

T

VJM

T

stg

P

tot

Conditions

T

C

= 90°C;

T

C

= 25°C; (at rated V

R

, Sqare Wave, 20 kHz)

t

p

= 8.3 ms; sine

Maximum Ratings

9

20

-55...+175

175

-55...+150

A

°C

W

Features

Low forward voltage

Very high switching speed –

low I

RM

, t

rr

values

Soft reverse recovery

Temperature independent switching

behaviour

High temperature operation capability

Applications

Switched mode power supplies

(SMPS)

High frequency converters

Resonant converters

Outline TO-263 AB

T

C

= 25°C

34

Symbol

V

F

Conditions

I

F

= 5 A

I

F

= 5 A

I

F

= 10 A

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 25°C

Characteristic Values

typ.

max.

1.2

1.3

2.0

15

70

1.5

V

µA

mA

A

ns

I

R

V

R

= ½ V

RRM

T

VJ

= 25°C

V

R

= ½ V

RRM

T

VJ

= 125°C

V

R

= V

RRM

T

VJ

= 25°C

V

R

= 100 V; T

VJ

= 25°C...150°C

I

F

= 5 A; di/dt = -150 A/µs

1.3

1.2

13

4.4

2

I

RM

t

rr

R

thJC

Weight

K/W

g

Dim.

A

A1

b

b2

c

c2

D

D1

E

E1

e

L

L1

L2

L3

L4

R

Millimeter

Min.

Max.

4.06

2.03

0.51

1.14

0.46

1.14

8.64

8.00

4.83

2.79

0.99

1.40

0.74

1.40

9.65

8.89

Inches

Min. Max.

.160

.080

.020

.045

.018

.045

.340

.315

.190

.110

.039

.055

.029

.055

.380

.350

Data according to DIN/IEC 747 and per diode unless otherwise specified

9.65

10.29

6.22

8.13

2.54 BSC

14.61

2.29

1.02

1.27

0

0.46

15.88

2.79

1.40

1.78

0.20

0.74

.380

.405

.245

.320

.100 BSC

.575

.090

.040

.050

0

.018

.625

.110

.055

.070

.008

.029

1-1

945

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